Diodes Incorporated BC856BW-7-F

BC856BW-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Input voltage breakdown is available at 65V volts.Product comes in the supplier's device package SOT-323.There is a 65V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC856BW-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of SOT-323


BC856BW-7-F Applications
There are a lot of Diodes Incorporated
BC856BW-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting