ON Semiconductor BC856BM3T5G

Name: BC856BM3T5G
Brand: ON Semiconductor
SKU: 3553794-BC856BM3T5G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856BM3T5G

Manufacturer:: ON Semiconductor

Ventron No:: 3553794-BC856BM3T5G

Description:: TRANS PNP 65V 0.1A SOT-723

ECAD Model:

Datasheet:: BC856BM3T5G

Specifications

ON Semiconductor BC856BM3T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC856BM3T5G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
265mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC856BM
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
640mW
Power - Max
265mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
Height
550μm
Length
1.25mm
Width
850μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC856BM3T5G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC856BM3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz

BC856BM3T5G Applications
There are a lot of ON Semiconductor
BC856BM3T5G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856BM3T5G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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Trans GP BJT PNP 65V 0.1A 3-Pin SOT-723 T/R - Tape and Reel
Transistor, BIPOL, PNP, -65V, SOT-723-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power
This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications
Transistor, Bipol, Pnp, -65V, Sot-723-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:265Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC856BM3T5G
TRANSISTOR, BIPOL, PNP, -65V, SOT-723-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 265mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification