Diodes Incorporated BC856B-7-F

Name: BC856B-7-F
Brand: Diodes Incorporated
SKU: 2463169-BC856B-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856B-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2463169-BC856B-7-F

Description:: TRANS PNP 65V 0.1A SOT23-3

ECAD Model:

Datasheet:: BC856B-7-F

Specifications

Diodes Incorporated BC856B-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC856B-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC856B
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-65V
Max Collector Current
-100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
-65V
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
220
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC856B-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.200MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.The device exhibits a collector-emitter breakdown at 65V.Maximum collector currents can be below -100mA volts.

BC856B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

BC856B-7-F Applications
There are a lot of Diodes Incorporated
BC856B-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856B-7-F More Descriptions

TRANS PNP 65V 0.1A SOT23-3 / Trans GP BJT PNP 65V 0.1A 350mW 3-Pin SOT-23 T/R
65V 300mW 220@2mA,5V 100mA PNP SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856B Series 65 V 100 mA SMT PNP General Purpose Transistor - SOT-23
Transistor PNP 65V 0.1A SOT23 | Diodes Inc BC856B-7-F
Transistor, Pnp, Sot23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: Yes |Diodes Inc. BC856B-7-F
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Certification