Nexperia USA Inc. BC847W,115
- Part Number:
- BC847W,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465434-BC847W,115
- Description:
- TRANS NPN 45V 0.1A SOT323
- Datasheet:
- BC847W,115
Nexperia USA Inc. BC847W,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847W,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC847W,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC847W,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847W,115 Applications
There are a lot of Nexperia USA Inc.
BC847W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC847W,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847W,115 Applications
There are a lot of Nexperia USA Inc.
BC847W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847W,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A 200mW Automotive 3-Pin SC-70 T/R
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):110 ;RoHS Compliant: Yes
Trans GP BJT NPN 45V 0.1A 200mW Automotive 3-Pin SC-70 T/R
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):110 ;RoHS Compliant: Yes
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