Rohm Semiconductor BC847CT116

Name: BC847CT116
Brand: Rohm Semiconductor
SKU: 3068996-BC847CT116
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847CT116

Manufacturer:: Rohm Semiconductor

Ventron No:: 3068996-BC847CT116

Description:: TRANS NPN 45V 0.1A SST3

ECAD Model:

Datasheet:: BC847CT116

Specifications

Rohm Semiconductor BC847CT116 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BC847CT116.

Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
10
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
420
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847CT116 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).200MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

BC847CT116 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz

BC847CT116 Applications
There are a lot of ROHM Semiconductor
BC847CT116 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847CT116 More Descriptions

NPN, SOT-23, 45V 100mA, General Purpose Transistor
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
TRANSISTOR SOT-23 SST; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: 10mA; DC Current Gain hFE: 420hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 10mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 420; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose

Certification