Nexperia USA Inc. BC847CM,315
- Part Number:
- BC847CM,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3553807-BC847CM,315
- Description:
- TRANS NPN 45V 0.1A SOT883
- Datasheet:
- BC847CM,315
Nexperia USA Inc. BC847CM,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847CM,315.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-101, SOT-883
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC847CM,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CM,315 Applications
There are a lot of Nexperia USA Inc.
BC847CM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CM,315 Applications
There are a lot of Nexperia USA Inc.
BC847CM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847CM,315 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
45V 250mW 100mA NPN DFN1006-3 Bipolar Transistors - BJT ROHS
BC847 Series 45 V 100 mA 250 mW NPN General Purpose Transistor - SOT-883
Trans Gp Bjt Npn 45V 0.1A Automotive 3-Pin Dfn T/R
vp_BC847xM_SER - 45 V, 100 mA NPN general-purpose transistors
45V 250mW 100mA NPN DFN1006-3 Bipolar Transistors - BJT ROHS
BC847 Series 45 V 100 mA 250 mW NPN General Purpose Transistor - SOT-883
Trans Gp Bjt Npn 45V 0.1A Automotive 3-Pin Dfn T/R
vp_BC847xM_SER - 45 V, 100 mA NPN general-purpose transistors
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