Diodes Incorporated BC847B-13-F

Name: BC847B-13-F
Brand: Diodes Incorporated
SKU: 2464146-BC847B-13-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847B-13-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2464146-BC847B-13-F

Description:: TRANS NPN 45V 0.1A SOT-23

ECAD Model:

Datasheet:: BC847B-13-F

Specifications

Diodes Incorporated BC847B-13-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847B-13-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
450 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200V
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
200mA
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC847B-13-F Overview
DC current gain in this device equals 450 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847B-13-F Features
the DC current gain for this device is 450 @ 2mA 5V
a collector emitter saturation voltage of 200V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC847B-13-F Applications
There are a lot of Diodes Incorporated
BC847B-13-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847B-13-F More Descriptions

Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 310mW Surface Mount SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin SOT-23 T/R
Trans, Npn, 45V, 0.1A, 150Deg C, 0.35W Rohs Compliant: Yes |Diodes Inc. BC847B-13-F

Certification