Nexperia USA Inc. BC847,235
- Part Number:
- BC847,235
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464150-BC847,235
- Description:
- TRANS NPN 45V 0.1A SOT23
- Datasheet:
- BC847,235
Nexperia USA Inc. BC847,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847,235.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BC847,235 Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC847,235 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,235 Applications
There are a lot of Nexperia USA Inc.
BC847,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC847,235 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,235 Applications
There are a lot of Nexperia USA Inc.
BC847,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847,235 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
45V 250mW 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin TO-236AB T/R
BC847 Series 45 V 100 mA NPN Surface Mount Silicon Transistor - SOT-23
NPN TRANSISTOR BIPOLAR SMD CASE SOT23
TRANSISTOR NPN 45V 100MA SOT23
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
45V 250mW 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin TO-236AB T/R
BC847 Series 45 V 100 mA NPN Surface Mount Silicon Transistor - SOT-23
NPN TRANSISTOR BIPOLAR SMD CASE SOT23
TRANSISTOR NPN 45V 100MA SOT23
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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