Fairchild/ON Semiconductor BC846CMTF
- Part Number:
- BC846CMTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464820-BC846CMTF
- Description:
- TRANS NPN 65V 0.1A SOT-23
- Datasheet:
- BC846CMTF
Fairchild/ON Semiconductor BC846CMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC846CMTF.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC65V
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating100mA
- Frequency300MHz
- Base Part NumberBC846
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Height930μm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC846CMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC846CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC846CMTF Applications
There are a lot of ON Semiconductor
BC846CMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC846CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC846CMTF Applications
There are a lot of ON Semiconductor
BC846CMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC846CMTF More Descriptions
BC846 Series 65 V 0.1 A 310 mW NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 310mW 3-Pin SOT-23 T/R
65V 310mW 100mA 420@2mA5V 300MHz 200mV@100mA5mA NPN 150¡Í@(Tj) SOT-23-3L Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 310mW 3-Pin SOT-23 T/R
65V 310mW 100mA 420@2mA5V 300MHz 200mV@100mA5mA NPN 150¡Í@(Tj) SOT-23-3L Bipolar Transistors - BJT ROHS
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