BC846CMTF

Fairchild/ON Semiconductor BC846CMTF

Part Number:
BC846CMTF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2464820-BC846CMTF
Description:
TRANS NPN 65V 0.1A SOT-23
ECAD Model:
Datasheet:
BC846CMTF

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Specifications
Fairchild/ON Semiconductor BC846CMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC846CMTF.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    65V
  • Max Power Dissipation
    310mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    100mA
  • Frequency
    300MHz
  • Base Part Number
    BC846
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    310mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    200mV
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    110
  • Height
    930μm
  • Length
    2.92mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC846CMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC846CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz


BC846CMTF Applications
There are a lot of ON Semiconductor
BC846CMTF applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC846CMTF More Descriptions
BC846 Series 65 V 0.1 A 310 mW NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 310mW 3-Pin SOT-23 T/R
65V 310mW 100mA 420@2mA5V 300MHz 200mV@100mA5mA NPN 150¡Í@(Tj) SOT-23-3L Bipolar Transistors - BJT ROHS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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