ON Semiconductor BC846BM3T5G

Name: BC846BM3T5G
Brand: ON Semiconductor
SKU: 2464236-BC846BM3T5G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BM3T5G

Manufacturer:: ON Semiconductor

Ventron No:: 2464236-BC846BM3T5G

Description:: TRANS NPN 65V 0.1A SOT-723

ECAD Model:

Datasheet:: BC846BM3T5G

Specifications

ON Semiconductor BC846BM3T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC846BM3T5G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
265mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC846
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
640mW
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
150
Height
550μm
Length
1.25mm
Width
850μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC846BM3T5G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 65V volts.The maximum collector current is 100mA volts.

BC846BM3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC846BM3T5G Applications
There are a lot of ON Semiconductor
BC846BM3T5G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC846BM3T5G More Descriptions

ON Semi BC846BM3T5G NPN Bipolar Transistor; 0.1 A; 65 V; 3-Pin SOT-723
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC Series 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-723
Trans GP BJT NPN 65V 0.1A Automotive 3-Pin SOT-723 T/R
Transistor, NPN, 65V, 100MA, SOT-723-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power
TRANSISTOR, NPN, 65V, 100MA, SOT-723-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 265mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

Certification