ON Semiconductor BC846BLT1G

Name: BC846BLT1G
Brand: ON Semiconductor
SKU: 2462820-BC846BLT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BLT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2462820-BC846BLT1G

Description:: TRANS NPN 65V 0.1A SOT23

ECAD Model:

Datasheet:: BC846BLT1G

Specifications

ON Semiconductor BC846BLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC846BLT1G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Noise Figure
10 dB
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC846BLT1G Description
The ON Semiconductor BC846BLT1G Transistor is a 65V NPN silicon Bipolar Transistor that is ideal for linear and switching applications. The device is appropriate for low-power surface-mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic.

BC846BLT1G Features
6V Emitter to base voltage (VEBO)
556°C/W Thermal resistance, junction to ambient
Halogen-free/BFR-free
ESD rating - >4000V human body model, >400V machine model
80V Collector to base voltage (VCBO)

BC846BLT1G Applications
Industrial
Power Management
Safety

BC846BLT1G More Descriptions

Transistor, Bipolar,Si,NPN,General Purpose,VCEO 65VDC,IC 100mA,PD 225mW,SOT-23
TRANS NPN 65V 0.1A SOT23 / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
65V 300mW 200@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
ON SEMI# BC846BLT1G, BC S eries 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23, ROHS
Trans, Npn, 65V, 0.1A, 0.3W, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:65V; Transition Frequency Ft:100Mhz; Power Dissipation Pd:300Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:200Hfe; Transistor Caserohs Compliant: Yes |Onsemi BC846BLT1G.

Certification