Nexperia USA Inc. BC846B,215
- Part Number:
- BC846B,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463074-BC846B,215
- Description:
- TRANS NPN 65V 0.1A SOT23
- Datasheet:
- BC846B,215
Nexperia USA Inc. BC846B,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC846B,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC846
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC846B,215 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC846B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC846B,215 Applications
There are a lot of Nexperia USA Inc.
BC846B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC846B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC846B,215 Applications
There are a lot of Nexperia USA Inc.
BC846B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC846B,215 More Descriptions
Transistor General Purpose BJT NPN 65 Volt 0.1A Automotive 3-Pin TO-236AB
Bipolar junction transistor, NPN, 100 mA, 65 V, SMD, SOT-23, BC846B,215
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor NPN, SOT-23 (TO-236AB) 65V 100mASurface Mount
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Ptot Max:250mW; Reel Quantity:3000; SMD Marking:1B; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:80V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Bipolar junction transistor, NPN, 100 mA, 65 V, SMD, SOT-23, BC846B,215
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor NPN, SOT-23 (TO-236AB) 65V 100mASurface Mount
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Ptot Max:250mW; Reel Quantity:3000; SMD Marking:1B; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:80V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
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