BC846AW,115

Nexperia USA Inc. BC846AW,115

Part Number:
BC846AW,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464451-BC846AW,115
Description:
TRANS NPN 65V 0.1A SOT323
ECAD Model:
Datasheet:
BC846AW,115

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Specifications
Nexperia USA Inc. BC846AW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC846AW,115.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC846
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC846AW,115 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC846AW,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


BC846AW,115 Applications
There are a lot of Nexperia USA Inc.
BC846AW,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC846AW,115 More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 110 @ 2mA 5V 15nA ICBO 200mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC846xW series - 65 V, 100 mA NPN general-purpose transistors
Trans GP BJT NPN 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
Transistor, AEC-Q101, NPN, 65V, 0.1A, 0.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power
Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhz; Product Range:Bc846 Series Rohs Compliant: Yes |Nexperia BC846AW,115.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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