BC846AMTF

Fairchild/ON Semiconductor BC846AMTF

Part Number:
BC846AMTF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463727-BC846AMTF
Description:
TRANS NPN 65V 0.1A SOT-23
ECAD Model:
Datasheet:
BC846-BC850

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Specifications
Fairchild/ON Semiconductor BC846AMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC846AMTF.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 5 days ago)
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    65V
  • Max Power Dissipation
    310mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    100mA
  • Frequency
    300MHz
  • Base Part Number
    BC846
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    310mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    200mV
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    110
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
BC846AMTF Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC846AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz


BC846AMTF Applications
There are a lot of ON Semiconductor
BC846AMTF applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC846AMTF More Descriptions
BC846 Series NPN 310 mW 65 V 100 mA Surface Mount Epitaxial Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
TRANSISTOR NPN 65V 100MA SOT-23
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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