Fairchild/ON Semiconductor BC846AMTF
- Part Number:
- BC846AMTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463727-BC846AMTF
- Description:
- TRANS NPN 65V 0.1A SOT-23
- Datasheet:
- BC846-BC850
Fairchild/ON Semiconductor BC846AMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC846AMTF.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC65V
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating100mA
- Frequency300MHz
- Base Part NumberBC846
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC846AMTF Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC846AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC846AMTF Applications
There are a lot of ON Semiconductor
BC846AMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC846AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC846AMTF Applications
There are a lot of ON Semiconductor
BC846AMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC846AMTF More Descriptions
BC846 Series NPN 310 mW 65 V 100 mA Surface Mount Epitaxial Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
TRANSISTOR NPN 65V 100MA SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
TRANSISTOR NPN 65V 100MA SOT-23
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