ON Semiconductor BC846ALT3G

Name: BC846ALT3G
Brand: ON Semiconductor
SKU: 2462815-BC846ALT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846ALT3G

Manufacturer:: ON Semiconductor

Ventron No:: 2462815-BC846ALT3G

Description:: TRANS NPN 65V 0.1A SOT-23

ECAD Model:

Datasheet:: BC846ALT3G

Specifications

ON Semiconductor BC846ALT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC846ALT3G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Height
1.01mm
Length
3.04mm
Width
1.4mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC846ALT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.

BC846ALT3G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC846ALT3G Applications
There are a lot of ON Semiconductor
BC846ALT3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC846ALT3G More Descriptions

ON Semi BC846ALT3G NPN Bipolar Transistor, 0.1 A, 65 V, 3-Pin SOT-23 | ON Semiconductor BC846ALT3G
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65V 225mW 100mA 180@2mA5V 100MHz 600mV@100mA5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn, 65V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC846ALT3G

Certification