Nexperia USA Inc. BC817-40QAZ
- Part Number:
- BC817-40QAZ
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463820-BC817-40QAZ
- Description:
- TRANS NPN 45V 0.5A DFN1010D-3
- Datasheet:
- BC817-40QAZ
Nexperia USA Inc. BC817-40QAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC817-40QAZ.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XDFN Exposed Pad
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation900mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC817
- Pin Count3
- Gain Bandwidth Product100MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Continuous Collector Current500mA
- RoHS StatusROHS3 Compliant
BC817-40QAZ Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BC817-40QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC817-40QAZ Applications
There are a lot of Nexperia USA Inc.
BC817-40QAZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BC817-40QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC817-40QAZ Applications
There are a lot of Nexperia USA Inc.
BC817-40QAZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC817-40QAZ More Descriptions
BC817-25QA; BC817-40QA - 45 V, 500 mA NPN general-purpose transistors
Small Signal Bipolar Transistor, 1-Element, NPN
Trans GP BJT NPN 45V 0.5A 900mW Automotive 3-Pin DFN-D EP T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 45V, 0.5A, DFN1010D-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Trans, Npn, 45V, 0.5A, 150Deg C, 0.9W; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC817-40QAZ
Small Signal Bipolar Transistor, 1-Element, NPN
Trans GP BJT NPN 45V 0.5A 900mW Automotive 3-Pin DFN-D EP T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 45V, 0.5A, DFN1010D-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Trans, Npn, 45V, 0.5A, 150Deg C, 0.9W; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC817-40QAZ
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