BC817-40QAZ

Nexperia USA Inc. BC817-40QAZ

Part Number:
BC817-40QAZ
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463820-BC817-40QAZ
Description:
TRANS NPN 45V 0.5A DFN1010D-3
ECAD Model:
Datasheet:
BC817-40QAZ

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Specifications
Nexperia USA Inc. BC817-40QAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC817-40QAZ.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XDFN Exposed Pad
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    900mW
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BC817
  • Pin Count
    3
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Collector Emitter Saturation Voltage
    700mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    250
  • Continuous Collector Current
    500mA
  • RoHS Status
    ROHS3 Compliant
Description
BC817-40QAZ Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

BC817-40QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BC817-40QAZ Applications
There are a lot of Nexperia USA Inc.
BC817-40QAZ applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC817-40QAZ More Descriptions
BC817-25QA; BC817-40QA - 45 V, 500 mA NPN general-purpose transistors
Small Signal Bipolar Transistor, 1-Element, NPN
Trans GP BJT NPN 45V 0.5A 900mW Automotive 3-Pin DFN-D EP T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 45V, 0.5A, DFN1010D-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Trans, Npn, 45V, 0.5A, 150Deg C, 0.9W; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC817-40QAZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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