BC817-40Q-7-F

Diodes Incorporated BC817-40Q-7-F

Part Number:
BC817-40Q-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2465008-BC817-40Q-7-F
Description:
TRANS NPN 45V 500MA SOT23
ECAD Model:
Datasheet:
BC817-40Q-7-F

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Specifications
Diodes Incorporated BC817-40Q-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC817-40Q-7-F.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    310mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    310mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    700mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC817-40Q-7-F Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC817-40Q-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz


BC817-40Q-7-F Applications
There are a lot of Diodes Incorporated
BC817-40Q-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC817-40Q-7-F More Descriptions
Trans GP BJT NPN 45V 0.5A 350mW Automotive 3-Pin SOT-23 T/R
45V 310mW 250@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Transistor, Npn, 45V, 0.5A, Sot-23 Rohs Compliant: Yes |Diodes Inc. BC817-40Q-7-F
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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