ON Semiconductor BC807-40LT1G

Name: BC807-40LT1G
Brand: ON Semiconductor
SKU: 3068721-BC807-40LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC807-40LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3068721-BC807-40LT1G

Description:: TRANS PNP 45V 0.5A SOT23

ECAD Model:

Datasheet:: BC807-40LT1G

Specifications

ON Semiconductor BC807-40LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC807-40LT1G.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC807
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC807-40LT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

BC807-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-40LT1G Applications
There are a lot of ON Semiconductor
BC807-40LT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC807-40LT1G More Descriptions

ON Semi BC807-40LT1G PNP Bipolar Transistor; 0.5 A; 45 V; 3-Pin SOT-23
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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Trans GP BJT PNP 45V 0.5A Automotive 3-Pin SOT-23 T/R
TRANS, PNP, -45V, -0.5A, 150DEG C, 0.3W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 250h
Trans, Pnp, -45V, -0.5A, 150Deg C, 0.3W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC807-40LT1G.

Certification