ON Semiconductor BC807-25LT1G

Name: BC807-25LT1G
Brand: ON Semiconductor
SKU: 2463100-BC807-25LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC807-25LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463100-BC807-25LT1G

Description:: TRANS PNP 45V 0.5A SOT23

ECAD Model:

Datasheet:: BC807-25LT1G

Specifications

ON Semiconductor BC807-25LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC807-25LT1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC807
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC807-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC807-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-25LT1G Applications
There are a lot of ON Semiconductor
BC807-25LT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC807-25LT1G More Descriptions

Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
45V 300mW 160@100mA,1V 500mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
BC807 Series PNP 45 V 500 mA Surface Mount General Purpose Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
TRANS PNP 45V 0.5A SOT23 / Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R
TRANSISTOR, BC807-25LT1; Transistor Polarity:PNP; Max Voltage Vce Sat:160V; Power Dissipation:0.3W; Min Hfe:400; Case Style:SOT-23
Bipolar Transistor, Pnp, -45V, Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC807-25LT1G.
TRANSISTOR, BC807-25LT1; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:160V; Gain Bandwidth ft Typ:100MHz; Hfe Min:400; Package / Case:SOT-23; Power Dissipation Pd:300mW

Certification