Fairchild/ON Semiconductor BC635

Name: BC635
Brand: Fairchild/ON Semiconductor
SKU: 3069058-BC635
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC635

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069058-BC635

Description:: TRANS NPN 45V 1A TO-92

ECAD Model:

Datasheet:: BC635,7,9

Specifications

Fairchild/ON Semiconductor BC635 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC635.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
45V
Max Power Dissipation
1W
Current Rating
1A
Frequency
100MHz
Base Part Number
BC635
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Power - Max
1W
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Max Frequency
100MHz
Collector Emitter Saturation Voltage
500mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC635 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The product comes in the supplier device package of TO-92-3.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.

BC635 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3

BC635 Applications
There are a lot of ON Semiconductor
BC635 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC635 More Descriptions

Transistor GP BJT NPN 45V 1A 3-Pin TO-92Avnet Japan
Transistor, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:200MHz; Power Dissipation Pd:800mW;
Bipolar Transistor, Npn, 45V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:1A; Power Dissipation:800Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro BC635
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 800mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 40; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: h; Power Dissipation Ptot Max: 830mW; Termination Type: Through Hole; Voltage Vcbo: 45V

Product Comparison

The three parts on the right have similar specifications to BC635.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Polarity/Channel Type

Transition Frequency

Continuous Collector Current

Transistor Application

View Compare
BC635

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

TO-92-3

201mg

150°C TJ

Bulk

2002

Obsolete

1 (Unlimited)

Through Hole

150°C

-65°C

45V

1W

1A

100MHz

BC635

1

NPN

Single

1W

1W

100MHz

NPN

45V

1A

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

45V

45V

1A

100MHz

500mV

100MHz

45V

5V

40

5.33mm

5.2mm

4.19mm

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC637_D26Z

Fairchild/ON Semiconductor

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

-

150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

BC637

-

-

-

-

1W

-

NPN

-

-

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

60V

1A

-

-

100MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC635 vs BC637_D26Z
BC635RL1

ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2005

Obsolete

1 (Unlimited)

-

-

-

45V

625mW

1A

-

BC635

1

-

Single

-

-

200MHz

NPN

45V

1A

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

45V

-

-

-

500mV

-

45V

5V

25

-

-

-

-

Non-RoHS Compliant

Contains Lead

SILICON

e0

3

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

8541.21.00.75

Other Transistors

BOTTOM

240

not_compliant

30

3

Not Qualified

NPN

200MHz

1A

-

BC635 vs BC635RL1
BC63916

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

-

201mg

-55°C~150°C TJ

Bulk

-

Obsolete

1 (Unlimited)

-

-

-

80V

1W

1A

100MHz

BC639

1

-

Single

1W

-

100MHz

NPN

80V

1A

100 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

-

-

-

500mV

-

-

5V

100

-

-

-

-

RoHS Compliant

Lead Free

SILICON

-

3

EAR99

-

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

-

NPN

100MHz

-

SWITCHING

BC635 vs BC63916