ON Semiconductor BC618RL1G

BC618RL1G Overview
DC current gain in this device equals 10000 @ 200mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 200μA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 1A volts.

BC618RL1G Features
the DC current gain for this device is 10000 @ 200mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 150MHz


BC618RL1G Applications
There are a lot of ON Semiconductor
BC618RL1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting