BC558C

Fairchild/ON Semiconductor BC558C

Part Number:
BC558C
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2467514-BC558C
Description:
TRANS PNP 30V 0.1A TO-92
ECAD Model:
Datasheet:
BC558C

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Comments
Specifications
Fairchild/ON Semiconductor BC558C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC558C.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Voltage - Rated DC
    -30V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    -100mA
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Lead Free
Description
BC558C Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).

BC558C Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the current rating of this device is -100mA
a transition frequency of 150MHz


BC558C Applications
There are a lot of Rochester Electronics, LLC
BC558C applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC558C More Descriptions
Bipolar junction transistor, PNP, -100 mA, -30 V, THT, TO-92, BC558C
Trans GP BJT PNP 30V 0.1A 500mW Automotive 3-Pin TO-92 Ammo
BJT, TO-92, 30V, 100mA, PNP, 150°C
Product Comparison
The three parts on the right have similar specifications to BC558C.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Voltage - Rated DC
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lead Free
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Reach Compliance Code
    Base Part Number
    JESD-30 Code
    Power - Max
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Weight
    Max Power Dissipation
    Frequency
    Element Configuration
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC558C
    BC558C
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    3
    SILICON
    150°C TJ
    Bulk
    2002
    e0
    no
    Obsolete
    3 (168 Hours)
    3
    TIN LEAD
    -30V
    BOTTOM
    NOT SPECIFIED
    -100mA
    NOT SPECIFIED
    3
    COMMERCIAL
    1
    SINGLE
    500mW
    SWITCHING
    PNP
    PNP
    420 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    30V
    100mA
    150MHz
    150MHz
    Non-RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC550C,112
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    -
    SILICON
    150°C TJ
    Bulk
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    -
    BOTTOM
    250
    -
    40
    3
    Not Qualified
    1
    SINGLE
    -
    AMPLIFIER
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    100MHz
    ROHS3 Compliant
    -
    EAR99
    LOW NOISE
    8541.21.00.95
    Other Transistors
    unknown
    BC550
    O-PBCY-T3
    500mW
    0.625W
    0.6 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    -65V
    BOTTOM
    NOT SPECIFIED
    -100mA
    NOT SPECIFIED
    -
    Not Qualified
    1
    -
    500mW
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    -
    -
    150MHz
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    Other Transistors
    -
    BC556
    -
    -
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    Through Hole
    240mg
    500mW
    150MHz
    Single
    150MHz
    65V
    100mA
    65V
    -250mV
    65V
    -80V
    -5V
    110
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Box (TB)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    45V
    BOTTOM
    -
    100mA
    -
    -
    -
    1
    -
    500mW
    SWITCHING
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    300MHz
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    Other Transistors
    -
    BC550
    -
    -
    -
    -
    -
    7 Weeks
    Tin
    Through Hole
    240mg
    500mW
    300MHz
    Single
    300MHz
    45V
    100mA
    45V
    250mV
    45V
    50V
    5V
    110
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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