Fairchild/ON Semiconductor BC558BBU
- Part Number:
- BC558BBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585339-BC558BBU
- Description:
- TRANS PNP 30V 0.1A TO-92
- Datasheet:
- BC558BBU
Fairchild/ON Semiconductor BC558BBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC558BBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
BC558BBU Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC558BBU Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC558BBU Applications
There are a lot of Rochester Electronics, LLC
BC558BBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC558BBU Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC558BBU Applications
There are a lot of Rochester Electronics, LLC
BC558BBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC558BBU More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA ICBO 500mW 150MHz
Compliant Through Hole 178.2 mg 110 PNP 150 MHz Lead Free Bulk
TRANS PNP 30V 0.1A TO92-3
MOSFET N-CH 30V 3.5A 6-TSOP
Amplifier Transistors
Compliant Through Hole 178.2 mg 110 PNP 150 MHz Lead Free Bulk
TRANS PNP 30V 0.1A TO92-3
MOSFET N-CH 30V 3.5A 6-TSOP
Amplifier Transistors
The three parts on the right have similar specifications to BC558BBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusPublishedECCN CodeAdditional FeatureHTS CodeSubcategoryReach Compliance CodeBase Part NumberPower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthLead FreeTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC558BBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLE500mWSWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA30V100mA150MHz150MHzROHS3 Compliant---------------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3-Obsolete1 (Unlimited)3Matte Tin (Sn)BOTTOM250403O-PBCY-T3Not Qualified1SINGLE500mWAMPLIFIERNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA100MHz100MHzROHS3 Compliant2009EAR99LOW NOISE8541.21.00.95Other TransistorsunknownBC5500.625W0.6 V-----------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3-BOTTOMNOT SPECIFIEDNOT SPECIFIED--Not Qualified1--SWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz-ROHS3 Compliant2007EAR99--Other Transistors-BC556--ACTIVE (Last Updated: 4 days ago)2 WeeksTinThrough Hole3240mg-65V500mW-100mA150MHzSingle500mW150MHz65V100mA65V-250mV65V-80V-5V1105.33mm5.2mm4.19mmLead Free----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Box (TB)e3yesActive1 (Unlimited)3-BOTTOM-----1--SWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA--300MHz-ROHS3 Compliant2002EAR99--Other Transistors-BC550---7 WeeksTinThrough Hole3240mg45V500mW100mA300MHzSingle500mW300MHz45V100mA45V250mV45V50V5V1104.58mm4.58mm3.86mmLead FreeWIREISOLATEDNo SVHCNo
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