BC558BBU

Fairchild/ON Semiconductor BC558BBU

Part Number:
BC558BBU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585339-BC558BBU
Description:
TRANS PNP 30V 0.1A TO-92
ECAD Model:
Datasheet:
BC558BBU

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Comments
Specifications
Fairchild/ON Semiconductor BC558BBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC558BBU.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC558BBU Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.

BC558BBU Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz


BC558BBU Applications
There are a lot of Rochester Electronics, LLC
BC558BBU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC558BBU More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA ICBO 500mW 150MHz
Compliant Through Hole 178.2 mg 110 PNP 150 MHz Lead Free Bulk
TRANS PNP 30V 0.1A TO92-3
MOSFET N-CH 30V 3.5A 6-TSOP
Amplifier Transistors
Product Comparison
The three parts on the right have similar specifications to BC558BBU.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Published
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Reach Compliance Code
    Base Part Number
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Lead Free
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC558BBU
    BC558BBU
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    150°C TJ
    Bulk
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    BOTTOM
    NOT APPLICABLE
    NOT APPLICABLE
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    500mW
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    30V
    100mA
    150MHz
    150MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC550C,112
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    150°C TJ
    Bulk
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    BOTTOM
    250
    40
    3
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    500mW
    AMPLIFIER
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    100MHz
    ROHS3 Compliant
    2009
    EAR99
    LOW NOISE
    8541.21.00.95
    Other Transistors
    unknown
    BC550
    0.625W
    0.6 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    BOTTOM
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    Not Qualified
    1
    -
    -
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    -
    -
    150MHz
    -
    ROHS3 Compliant
    2007
    EAR99
    -
    -
    Other Transistors
    -
    BC556
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    Through Hole
    3
    240mg
    -65V
    500mW
    -100mA
    150MHz
    Single
    500mW
    150MHz
    65V
    100mA
    65V
    -250mV
    65V
    -80V
    -5V
    110
    5.33mm
    5.2mm
    4.19mm
    Lead Free
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    150°C TJ
    Tape & Box (TB)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    BOTTOM
    -
    -
    -
    -
    -
    1
    -
    -
    SWITCHING
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    300MHz
    -
    ROHS3 Compliant
    2002
    EAR99
    -
    -
    Other Transistors
    -
    BC550
    -
    -
    -
    7 Weeks
    Tin
    Through Hole
    3
    240mg
    45V
    500mW
    100mA
    300MHz
    Single
    500mW
    300MHz
    45V
    100mA
    45V
    250mV
    45V
    50V
    5V
    110
    4.58mm
    4.58mm
    3.86mm
    Lead Free
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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