Fairchild/ON Semiconductor BC558B
- Part Number:
- BC558B
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813497-BC558B
- Description:
- TRANS PNP 30V 0.1A TO-92
- Datasheet:
- BC558B
Fairchild/ON Semiconductor BC558B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC558B.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2002
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Voltage - Rated DC-30V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC558B Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 150MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC558B Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC558B Applications
There are a lot of Rochester Electronics, LLC
BC558B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 150MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC558B Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC558B Applications
There are a lot of Rochester Electronics, LLC
BC558B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC558B More Descriptions
Bipolar Transistor, TO-92, 30V, 100mA, PNP
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BC558B.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishVoltage - Rated DCTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLead FreeECCN CodeAdditional FeatureHTS CodeSubcategoryReach Compliance CodeBase Part NumberJESD-30 CodePower - MaxPower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingMountWeightMax Power DissipationCurrent RatingFrequencyElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC558BThrough HoleTO-226-3, TO-92-3 (TO-226AA)NO3SILICON150°C TJBulk2002e1yesObsolete1 (Unlimited)3TIN SILVER COPPER-30VBOTTOMNOT APPLICABLENOT APPLICABLE3COMMERCIAL1SINGLE500mWSWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA30V100mA150MHz150MHzROHS3 CompliantLead Free------------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)NO-SILICON150°C TJBulk2009e3-Obsolete1 (Unlimited)3Matte Tin (Sn)-BOTTOM250403Not Qualified1SINGLE-AMPLIFIERNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA100MHz100MHzROHS3 Compliant-EAR99LOW NOISE8541.21.00.95Other TransistorsunknownBC550O-PBCY-T3500mW0.625W0.6 V-------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-3SILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3--65VBOTTOMNOT SPECIFIEDNOT SPECIFIED-Not Qualified1-500mWSWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz-ROHS3 CompliantLead FreeEAR99--Other Transistors-BC556----ACTIVE (Last Updated: 4 days ago)2 WeeksTinThrough Hole240mg500mW-100mA150MHzSingle150MHz65V100mA65V-250mV65V-80V-5V1105.33mm5.2mm4.19mm----
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-3SILICON150°C TJTape & Box (TB)2002e3yesActive1 (Unlimited)3-45VBOTTOM----1-500mWSWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA--300MHz-ROHS3 CompliantLead FreeEAR99--Other Transistors-BC550-----7 WeeksTinThrough Hole240mg500mW100mA300MHzSingle300MHz45V100mA45V250mV45V50V5V1104.58mm4.58mm3.86mmWIREISOLATEDNo SVHCNo
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