BC558B

Fairchild/ON Semiconductor BC558B

Part Number:
BC558B
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813497-BC558B
Description:
TRANS PNP 30V 0.1A TO-92
ECAD Model:
Datasheet:
BC558B

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Comments
Specifications
Fairchild/ON Semiconductor BC558B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC558B.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2002
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Voltage - Rated DC
    -30V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • Pin Count
    3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC558B Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 150MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

BC558B Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz


BC558B Applications
There are a lot of Rochester Electronics, LLC
BC558B applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC558B More Descriptions
Bipolar Transistor, TO-92, 30V, 100mA, PNP
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to BC558B.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Voltage - Rated DC
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lead Free
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Reach Compliance Code
    Base Part Number
    JESD-30 Code
    Power - Max
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Weight
    Max Power Dissipation
    Current Rating
    Frequency
    Element Configuration
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC558B
    BC558B
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    3
    SILICON
    150°C TJ
    Bulk
    2002
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -30V
    BOTTOM
    NOT APPLICABLE
    NOT APPLICABLE
    3
    COMMERCIAL
    1
    SINGLE
    500mW
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    30V
    100mA
    150MHz
    150MHz
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC550C,112
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    -
    SILICON
    150°C TJ
    Bulk
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    -
    BOTTOM
    250
    40
    3
    Not Qualified
    1
    SINGLE
    -
    AMPLIFIER
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    100MHz
    ROHS3 Compliant
    -
    EAR99
    LOW NOISE
    8541.21.00.95
    Other Transistors
    unknown
    BC550
    O-PBCY-T3
    500mW
    0.625W
    0.6 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    -65V
    BOTTOM
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Not Qualified
    1
    -
    500mW
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    -
    -
    150MHz
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    Other Transistors
    -
    BC556
    -
    -
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    Through Hole
    240mg
    500mW
    -100mA
    150MHz
    Single
    150MHz
    65V
    100mA
    65V
    -250mV
    65V
    -80V
    -5V
    110
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Box (TB)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    45V
    BOTTOM
    -
    -
    -
    -
    1
    -
    500mW
    SWITCHING
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    300MHz
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    Other Transistors
    -
    BC550
    -
    -
    -
    -
    -
    7 Weeks
    Tin
    Through Hole
    240mg
    500mW
    100mA
    300MHz
    Single
    300MHz
    45V
    100mA
    45V
    250mV
    45V
    50V
    5V
    110
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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