Fairchild/ON Semiconductor BC557TAR

Name: BC557TAR
Brand: Fairchild/ON Semiconductor
SKU: 3069261-BC557TAR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC557TAR

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069261-BC557TAR

Description:: TRANS PNP 45V 0.1A TO-92

ECAD Model:

Datasheet:: BC557TAR

Specifications

Fairchild/ON Semiconductor BC557TAR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557TAR.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC557
Power - Max
500mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
150MHz

Description

BC557TAR Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.

BC557TAR Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC557TAR Applications
There are a lot of ON Semiconductor
BC557TAR applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC557TAR More Descriptions

Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Ammo

Product Comparison

The three parts on the right have similar specifications to BC557TAR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Surface Mount

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

Transition Frequency

Power Dissipation-Max (Abs)

VCEsat-Max

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Pbfree Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Lead Free

Terminal Form

Case Connection

REACH SVHC

Radiation Hardening

View Compare
BC557TAR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Box (TB)

Obsolete

1 (Unlimited)

BC557

500mW

PNP

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

45V

100mA

150MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC550C,112

NXP USA Inc.

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

150°C TJ

Bulk

Obsolete

1 (Unlimited)

BC550

500mW

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

100mA

100MHz

NO

SILICON

2009

e3

3

EAR99

Matte Tin (Sn)

LOW NOISE

8541.21.00.95

Other Transistors

BOTTOM

250

unknown

40

3

O-PBCY-T3

Not Qualified

1

SINGLE

AMPLIFIER

NPN

100MHz

0.625W

0.6 V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC557TAR vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

BC556

-

PNP

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

-

-

-

-

SILICON

2007

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

1

-

SWITCHING

PNP

150MHz

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

3

240mg

yes

-65V

500mW

-100mA

150MHz

Single

500mW

150MHz

65V

100mA

65V

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

Lead Free

-

-

-

-

BC557TAR vs BC556BTFR
BC550CTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Box (TB)

Active

1 (Unlimited)

BC550

-

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

SILICON

2002

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

-

-

-

-

-

-

1

-

SWITCHING

NPN

300MHz

-

-

ROHS3 Compliant

-

7 Weeks

Tin

Through Hole

3

240mg

yes

45V

500mW

100mA

300MHz

Single

500mW

300MHz

45V

100mA

45V

250mV

45V

50V

5V

110

4.58mm

4.58mm

3.86mm

Lead Free

WIRE

ISOLATED

No SVHC

No

BC557TAR vs BC550CTA