BC557CZL1G

ON Semiconductor BC557CZL1G

Part Number:
BC557CZL1G
Manufacturer:
ON Semiconductor
Ventron No:
2469258-BC557CZL1G
Description:
TRANS PNP 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC557CZL1G

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Specifications
ON Semiconductor BC557CZL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557CZL1G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    EUROPEAN PART NUMBER
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    320MHz
  • Frequency - Transition
    320MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC557CZL1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 320MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BC557CZL1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 320MHz


BC557CZL1G Applications
There are a lot of Rochester Electronics, LLC
BC557CZL1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC557CZL1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Tape and Ammo - Ammo Pack
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100nA 625mW 320MHz
Product Comparison
The three parts on the right have similar specifications to BC557CZL1G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Mount
    Number of Pins
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Lead Free
    HTS Code
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Weight
    Max Breakdown Voltage
    Height
    Length
    Width
    View Compare
  • BC557CZL1G
    BC557CZL1G
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    TIN SILVER COPPER
    EUROPEAN PART NUMBER
    BOTTOM
    260
    unknown
    40
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    625mW
    AMPLIFIER
    PNP
    PNP
    420 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    45V
    100mA
    320MHz
    320MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BZL1
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    EUROPEAN PART NUMBER
    BOTTOM
    235
    not_compliant
    30
    3
    -
    Not Qualified
    1
    -
    -
    AMPLIFIER
    PNP
    PNP
    180 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    -
    -
    280MHz
    -
    Non-RoHS Compliant
    Through Hole
    3
    2002
    EAR99
    Other Transistors
    -65V
    625mW
    -100mA
    280MHz
    BC556
    Single
    625mW
    280MHz
    650mV
    100mA
    65V
    -300mV
    -80V
    5V
    180
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC550C,112
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    150°C TJ
    Bulk
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    LOW NOISE
    BOTTOM
    250
    unknown
    40
    3
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    500mW
    AMPLIFIER
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    100MHz
    ROHS3 Compliant
    -
    -
    2009
    EAR99
    Other Transistors
    -
    -
    -
    -
    BC550
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8541.21.00.95
    0.625W
    0.6 V
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    Not Qualified
    1
    -
    -
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    -
    -
    150MHz
    -
    ROHS3 Compliant
    Through Hole
    3
    2007
    EAR99
    Other Transistors
    -65V
    500mW
    -100mA
    150MHz
    BC556
    Single
    500mW
    150MHz
    65V
    100mA
    65V
    -250mV
    -80V
    -5V
    110
    Lead Free
    -
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    240mg
    65V
    5.33mm
    5.2mm
    4.19mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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