ON Semiconductor BC557CZL1G
- Part Number:
- BC557CZL1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469258-BC557CZL1G
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC557CZL1G
ON Semiconductor BC557CZL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557CZL1G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Additional FeatureEUROPEAN PART NUMBER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency320MHz
- Frequency - Transition320MHz
- RoHS StatusROHS3 Compliant
BC557CZL1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 320MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC557CZL1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 320MHz
BC557CZL1G Applications
There are a lot of Rochester Electronics, LLC
BC557CZL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 320MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC557CZL1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 320MHz
BC557CZL1G Applications
There are a lot of Rochester Electronics, LLC
BC557CZL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557CZL1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Tape and Ammo - Ammo Pack
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100nA 625mW 320MHz
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Tape and Ammo - Ammo Pack
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100nA 625mW 320MHz
The three parts on the right have similar specifications to BC557CZL1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeHTS CodePower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingWeightMax Breakdown VoltageHeightLengthWidthView Compare
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BC557CZL1GThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e1yesObsolete1 (Unlimited)3TIN SILVER COPPEREUROPEAN PART NUMBERBOTTOM260unknown403O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERPNPPNP420 @ 2mA 5V100nA650mV @ 5mA, 100mA45V100mA320MHz320MHzROHS3 Compliant---------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJTape & Box (TB)e0-Obsolete1 (Unlimited)3Tin/Lead (Sn/Pb)EUROPEAN PART NUMBERBOTTOM235not_compliant303-Not Qualified1--AMPLIFIERPNPPNP180 @ 2mA 5V100nA650mV @ 5mA, 100mA--280MHz-Non-RoHS CompliantThrough Hole32002EAR99Other Transistors-65V625mW-100mA280MHzBC556Single625mW280MHz650mV100mA65V-300mV-80V5V180Contains Lead-----------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3-Obsolete1 (Unlimited)3Matte Tin (Sn)LOW NOISEBOTTOM250unknown403O-PBCY-T3Not Qualified1SINGLE500mWAMPLIFIERNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA100MHz100MHzROHS3 Compliant--2009EAR99Other Transistors----BC550-----------8541.21.00.950.625W0.6 V--------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3--BOTTOMNOT SPECIFIED-NOT SPECIFIED--Not Qualified1--SWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz-ROHS3 CompliantThrough Hole32007EAR99Other Transistors-65V500mW-100mA150MHzBC556Single500mW150MHz65V100mA65V-250mV-80V-5V110Lead Free---ACTIVE (Last Updated: 4 days ago)2 WeeksTin240mg65V5.33mm5.2mm4.19mm
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