BC557C

ON Semiconductor BC557C

Part Number:
BC557C
Manufacturer:
ON Semiconductor
Ventron No:
3069646-BC557C
Description:
TRANS PNP 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC556, 557, 558

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Specifications
ON Semiconductor BC557C technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557C.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Supplier Device Package
    TO-92-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2005
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -45V
  • Max Power Dissipation
    625mW
  • Current Rating
    -100mA
  • Base Part Number
    BC557
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power - Max
    625mW
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    650mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Collector Emitter Saturation Voltage
    -300mV
  • Frequency - Transition
    320MHz
  • Collector Base Voltage (VCBO)
    -50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    420
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BC557C Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 100mA volts.

BC557C Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of TO-92-3


BC557C Applications
There are a lot of ON Semiconductor
BC557C applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC557C More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 500mW Automotive 3-Pin TO-92 Ammo
Diotec BC557C PNP Transistor TO92 0.2A -45V
Product Comparison
The three parts on the right have similar specifications to BC557C.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Polarity
    Element Configuration
    Power - Max
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transition Frequency
    Factory Lead Time
    Contact Plating
    Weight
    Pbfree Code
    Max Breakdown Voltage
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC557C
    BC557C
    LAST SHIPMENTS (Last Updated: 2 days ago)
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    TO-92-3
    -55°C~150°C TJ
    Bulk
    2005
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -45V
    625mW
    -100mA
    BC557
    PNP
    Single
    625mW
    100MHz
    PNP
    650mV
    100mA
    420 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    45V
    45V
    100mA
    -300mV
    320MHz
    -50V
    5V
    420
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BZL1
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -65V
    625mW
    -100mA
    BC556
    -
    Single
    -
    280MHz
    PNP
    650mV
    100mA
    180 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    65V
    -
    -
    -300mV
    -
    -80V
    5V
    180
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    SILICON
    e0
    3
    EAR99
    Tin/Lead (Sn/Pb)
    EUROPEAN PART NUMBER
    Other Transistors
    BOTTOM
    235
    not_compliant
    280MHz
    30
    3
    Not Qualified
    1
    625mW
    AMPLIFIER
    PNP
    280MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    ACTIVE (Last Updated: 4 days ago)
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    -
    150°C TJ
    Tape & Reel (TR)
    2007
    Active
    1 (Unlimited)
    -
    -
    -65V
    500mW
    -100mA
    BC556
    -
    Single
    -
    150MHz
    PNP
    65V
    100mA
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    65V
    -
    -
    -250mV
    -
    -80V
    -5V
    110
    ROHS3 Compliant
    Lead Free
    Through Hole
    SILICON
    e3
    3
    EAR99
    -
    -
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    150MHz
    NOT SPECIFIED
    -
    Not Qualified
    1
    500mW
    SWITCHING
    PNP
    150MHz
    2 Weeks
    Tin
    240mg
    yes
    65V
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    -
    150°C TJ
    Tape & Box (TB)
    2002
    Active
    1 (Unlimited)
    -
    -
    45V
    500mW
    100mA
    BC550
    -
    Single
    -
    300MHz
    NPN
    45V
    100mA
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    -
    -
    250mV
    -
    50V
    5V
    110
    ROHS3 Compliant
    Lead Free
    Through Hole
    SILICON
    e3
    3
    EAR99
    -
    -
    Other Transistors
    BOTTOM
    -
    -
    300MHz
    -
    -
    -
    1
    500mW
    SWITCHING
    NPN
    300MHz
    7 Weeks
    Tin
    240mg
    yes
    45V
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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