ON Semiconductor BC557C
- Part Number:
- BC557C
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069646-BC557C
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC556, 557, 558
ON Semiconductor BC557C technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557C.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-45V
- Max Power Dissipation625mW
- Current Rating-100mA
- Base Part NumberBC557
- PolarityPNP
- Element ConfigurationSingle
- Power - Max625mW
- Gain Bandwidth Product100MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)650mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Collector Emitter Saturation Voltage-300mV
- Frequency - Transition320MHz
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)5V
- hFE Min420
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BC557C Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 100mA volts.
BC557C Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of TO-92-3
BC557C Applications
There are a lot of ON Semiconductor
BC557C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 100mA volts.
BC557C Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of TO-92-3
BC557C Applications
There are a lot of ON Semiconductor
BC557C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557C More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 500mW Automotive 3-Pin TO-92 Ammo
Diotec BC557C PNP Transistor TO92 0.2A -45V
Trans GP BJT PNP 45V 0.1A 500mW Automotive 3-Pin TO-92 Ammo
Diotec BC557C PNP Transistor TO92 0.2A -45V
The three parts on the right have similar specifications to BC557C.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeMountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower DissipationTransistor ApplicationPolarity/Channel TypeTransition FrequencyFactory Lead TimeContact PlatingWeightPbfree CodeMax Breakdown VoltageHeightLengthWidthTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC557CLAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3-55°C~150°C TJBulk2005Obsolete1 (Unlimited)150°C-55°C-45V625mW-100mABC557PNPSingle625mW100MHzPNP650mV100mA420 @ 2mA 5V100nA650mV @ 5mA, 100mA45V45V100mA-300mV320MHz-50V5V420Non-RoHS CompliantContains Lead---------------------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3--55°C~150°C TJTape & Box (TB)2002Obsolete1 (Unlimited)---65V625mW-100mABC556-Single-280MHzPNP650mV100mA180 @ 2mA 5V100nA650mV @ 5mA, 100mA65V---300mV--80V5V180Non-RoHS CompliantContains LeadThrough HoleSILICONe03EAR99Tin/Lead (Sn/Pb)EUROPEAN PART NUMBEROther TransistorsBOTTOM235not_compliant280MHz303Not Qualified1625mWAMPLIFIERPNP280MHz------------
-
ACTIVE (Last Updated: 4 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-150°C TJTape & Reel (TR)2007Active1 (Unlimited)---65V500mW-100mABC556-Single-150MHzPNP65V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V---250mV--80V-5V110ROHS3 CompliantLead FreeThrough HoleSILICONe33EAR99--Other TransistorsBOTTOMNOT SPECIFIED-150MHzNOT SPECIFIED-Not Qualified1500mWSWITCHINGPNP150MHz2 WeeksTin240mgyes65V5.33mm5.2mm4.19mm----
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-150°C TJTape & Box (TB)2002Active1 (Unlimited)--45V500mW100mABC550-Single-300MHzNPN45V100mA420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V--250mV-50V5V110ROHS3 CompliantLead FreeThrough HoleSILICONe33EAR99--Other TransistorsBOTTOM--300MHz---1500mWSWITCHINGNPN300MHz7 WeeksTin240mgyes45V4.58mm4.58mm3.86mmWIREISOLATEDNo SVHCNo
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