Fairchild/ON Semiconductor BC557BU
- Part Number:
- BC557BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467484-BC557BU
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC557BU
Fairchild/ON Semiconductor BC557BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557BU.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight178.2mg
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-45V
- Max Power Dissipation500mW
- Current Rating-100mA
- Frequency150MHz
- Base Part NumberBC557
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Gain Bandwidth Product150MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)650mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage-250mV
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min110
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC557BU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.A maximum collector current of 100mA volts can be achieved.
BC557BU Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BC557BU Applications
There are a lot of ON Semiconductor
BC557BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.A maximum collector current of 100mA volts can be achieved.
BC557BU Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BC557BU Applications
There are a lot of ON Semiconductor
BC557BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557BU More Descriptions
Bipolar (BJT) Transistor PNP 45V 100mA 150MHz 500mW Through Hole TO-92-3
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
100 mA, 45 V, PNP Bipolar Juction Transistor
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
100 mA, 45 V, PNP Bipolar Juction Transistor
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk
The three parts on the right have similar specifications to BC557BU.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSurface MountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingPbfree CodeMax Breakdown VoltageHeightLengthWidthTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC557BUThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3178.2mg150°C TJBulkObsolete1 (Unlimited)-45V500mW-100mA150MHzBC5571Single500mW150MHzPNP650mV100mA110 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V-250mV-50V-5V110RoHS CompliantLead Free----------------------------------------
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-Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulkObsolete1 (Unlimited)----BC5501---NPN--420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-----ROHS3 Compliant-NOSILICON2009e33EAR99Matte Tin (Sn)LOW NOISE8541.21.00.95Other TransistorsBOTTOM250unknown403O-PBCY-T3Not QualifiedSINGLE500mWAMPLIFIERNPN45V100mA100MHz100MHz0.625W0.6 V------------
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mg150°C TJTape & Reel (TR)Active1 (Unlimited)-65V500mW-100mA150MHzBC5561Single500mW150MHzPNP65V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V-250mV-80V-5V110ROHS3 CompliantLead Free-SILICON2007e33EAR99---Other TransistorsBOTTOMNOT SPECIFIED-NOT SPECIFIED--Not Qualified--SWITCHINGPNP--150MHz---ACTIVE (Last Updated: 4 days ago)2 WeeksTinyes65V5.33mm5.2mm4.19mm----
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mg150°C TJTape & Box (TB)Active1 (Unlimited)45V500mW100mA300MHzBC5501Single500mW300MHzNPN45V100mA420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V250mV50V5V110ROHS3 CompliantLead Free-SILICON2002e33EAR99---Other TransistorsBOTTOM--------SWITCHINGNPN--300MHz----7 WeeksTinyes45V4.58mm4.58mm3.86mmWIREISOLATEDNo SVHCNo
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