BC557BU

Fairchild/ON Semiconductor BC557BU

Part Number:
BC557BU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2467484-BC557BU
Description:
TRANS PNP 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC557BU

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor BC557BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557BU.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    178.2mg
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    -45V
  • Max Power Dissipation
    500mW
  • Current Rating
    -100mA
  • Frequency
    150MHz
  • Base Part Number
    BC557
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    500mW
  • Gain Bandwidth Product
    150MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    650mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Collector Emitter Saturation Voltage
    -250mV
  • Collector Base Voltage (VCBO)
    -50V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    110
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
BC557BU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.A maximum collector current of 100mA volts can be achieved.

BC557BU Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA


BC557BU Applications
There are a lot of ON Semiconductor
BC557BU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC557BU More Descriptions
Bipolar (BJT) Transistor PNP 45V 100mA 150MHz 500mW Through Hole TO-92-3
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
100 mA, 45 V, PNP Bipolar Juction Transistor
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk
Product Comparison
The three parts on the right have similar specifications to BC557BU.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Pbfree Code
    Max Breakdown Voltage
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC557BU
    BC557BU
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    178.2mg
    150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    -45V
    500mW
    -100mA
    150MHz
    BC557
    1
    Single
    500mW
    150MHz
    PNP
    650mV
    100mA
    110 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    45V
    -250mV
    -50V
    -5V
    110
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC550C,112
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -
    150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    BC550
    1
    -
    -
    -
    NPN
    -
    -
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    SILICON
    2009
    e3
    3
    EAR99
    Matte Tin (Sn)
    LOW NOISE
    8541.21.00.95
    Other Transistors
    BOTTOM
    250
    unknown
    40
    3
    O-PBCY-T3
    Not Qualified
    SINGLE
    500mW
    AMPLIFIER
    NPN
    45V
    100mA
    100MHz
    100MHz
    0.625W
    0.6 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240mg
    150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    -65V
    500mW
    -100mA
    150MHz
    BC556
    1
    Single
    500mW
    150MHz
    PNP
    65V
    100mA
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    65V
    -250mV
    -80V
    -5V
    110
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    2007
    e3
    3
    EAR99
    -
    -
    -
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    Not Qualified
    -
    -
    SWITCHING
    PNP
    -
    -
    150MHz
    -
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    yes
    65V
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240mg
    150°C TJ
    Tape & Box (TB)
    Active
    1 (Unlimited)
    45V
    500mW
    100mA
    300MHz
    BC550
    1
    Single
    500mW
    300MHz
    NPN
    45V
    100mA
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    250mV
    50V
    5V
    110
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    2002
    e3
    3
    EAR99
    -
    -
    -
    Other Transistors
    BOTTOM
    -
    -
    -
    -
    -
    -
    -
    -
    SWITCHING
    NPN
    -
    -
    300MHz
    -
    -
    -
    -
    7 Weeks
    Tin
    yes
    45V
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.