Fairchild/ON Semiconductor BC557BTF
- Part Number:
- BC557BTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845657-BC557BTF
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC557BTF
Fairchild/ON Semiconductor BC557BTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557BTF.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-100mA
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC557
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min110
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC557BTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTF Applications
There are a lot of ON Semiconductor
BC557BTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTF Applications
There are a lot of ON Semiconductor
BC557BTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557BTF More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
BC557 Series 45 V 100 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
100 mA, 45 V, PNP Bipolar Juction Transistor
Trans GP BJT PNP 45V 0.1A 500mW 3-Pin TO-92 T/R
50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor
General Purpose Transistor, TO-92, PNP, 45V
45V 500mW 100mA 200@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -45V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
BC557 Series 45 V 100 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
100 mA, 45 V, PNP Bipolar Juction Transistor
Trans GP BJT PNP 45V 0.1A 500mW 3-Pin TO-92 T/R
50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor
General Purpose Transistor, TO-92, PNP, 45V
45V 500mW 100mA 200@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -45V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to BC557BTF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminal FinishAdditional FeatureReach Compliance CodePin CountSurface MountHTS CodeJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxView Compare
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BC557BTFACTIVE (Last Updated: 4 days ago)7 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-45V500mWBOTTOMNOT SPECIFIED-100mA150MHzNOT SPECIFIEDBC557Not Qualified1Single500mWSWITCHING150MHzPNPPNP45V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V150MHz-250mV45V-50V-5V1105.33mm5.2mm4.19mmNo SVHCROHS3 CompliantLead Free---------------
-
---Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-SILICON-55°C~150°C TJTape & Box (TB)2002e0-Obsolete1 (Unlimited)3EAR99Other Transistors-65V625mWBOTTOM235-100mA280MHz30BC556Not Qualified1Single625mWAMPLIFIER280MHzPNPPNP650mV100mA180 @ 2mA 5V100nA650mV @ 5mA, 100mA65V280MHz-300mV--80V5V180----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)EUROPEAN PART NUMBERnot_compliant3----------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA)--SILICON150°C TJBulk2009e3-Obsolete1 (Unlimited)3EAR99Other Transistors--BOTTOM250--40BC550Not Qualified1--AMPLIFIER-NPNNPN--420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-100MHz---------ROHS3 Compliant-Matte Tin (Sn)LOW NOISEunknown3NO8541.21.00.95O-PBCY-T3SINGLE500mW45V100mA100MHz0.625W0.6 V
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ACTIVE (Last Updated: 4 days ago)2 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-65V500mWBOTTOMNOT SPECIFIED-100mA150MHzNOT SPECIFIEDBC556Not Qualified1Single500mWSWITCHING150MHzPNPPNP65V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V150MHz-250mV65V-80V-5V1105.33mm5.2mm4.19mm-ROHS3 CompliantLead Free--------------
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