Fairchild/ON Semiconductor BC557BTA

Name: BC557BTA
Brand: Fairchild/ON Semiconductor
SKU: 2463184-BC557BTA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC557BTA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463184-BC557BTA

Description:: TRANS PNP 45V 0.1A TO-92

ECAD Model:

Datasheet:: BC557BTA

Specifications

Fairchild/ON Semiconductor BC557BTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557BTA.

Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Current Rating
-100mA
Frequency
150MHz
Base Part Number
BC557
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC557BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BC557BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC557BTA Applications
There are a lot of ON Semiconductor
BC557BTA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC557BTA More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Ammo - Ammo Pack
100 mA, 45 V, PNP Bipolar Juction Transistor
Bipolar Transistors - BJT TO-92 PNP GP AMP
BC557 Series 45 V 100 mA Through Hole PNP Epitaxial Transistor - TO-92
45V 500mW 100mA 200@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -45V, TO-92-3
TRANS, PNP, -45V, -0.1A, 0.5W, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 200hFE;

Product Comparison

The three parts on the right have similar specifications to BC557BTA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Surface Mount

HTS Code

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

Terminal Form

Case Connection

View Compare
BC557BTA

Fairchild/ON Semiconductor

6 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Box (TB)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-45V

500mW

BOTTOM

-100mA

150MHz

BC557

1

Single

500mW

SWITCHING

150MHz

PNP

PNP

45V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

45V

150MHz

-250mV

45V

-50V

-5V

110

4.58mm

4.58mm

3.86mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC556BZL1

ON Semiconductor

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2002

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-65V

625mW

BOTTOM

-100mA

280MHz

BC556

1

Single

625mW

AMPLIFIER

280MHz

PNP

PNP

650mV

100mA

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

65V

280MHz

-300mV

-

-80V

5V

180

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

235

not_compliant

30

3

Not Qualified

-

-

-

-

-

-

-

-

-

-

-

-

BC557BTA vs BC556BZL1
BC550C,112

NXP USA Inc.

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

SILICON

150°C TJ

Bulk

2009

e3

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-

-

BOTTOM

-

-

BC550

1

-

-

AMPLIFIER

-

NPN

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

100MHz

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

LOW NOISE

250

unknown

40

3

Not Qualified

NO

8541.21.00.95

O-PBCY-T3

SINGLE

500mW

45V

100mA

100MHz

0.625W

0.6 V

-

-

BC557BTA vs BC550C,112
BC550CTA

Fairchild/ON Semiconductor

7 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Box (TB)

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

500mW

BOTTOM

100mA

300MHz

BC550

1

Single

500mW

SWITCHING

300MHz

NPN

NPN

45V

100mA

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

300MHz

250mV

45V

50V

5V

110

4.58mm

4.58mm

3.86mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

WIRE

ISOLATED

BC557BTA vs BC550CTA