Fairchild/ON Semiconductor BC557
- Part Number:
- BC557
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467340-BC557
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC557
Fairchild/ON Semiconductor BC557 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published1996
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
BC557 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 150MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC557 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC557 Applications
There are a lot of Rochester Electronics, LLC
BC557 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 150MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC557 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC557 Applications
There are a lot of Rochester Electronics, LLC
BC557 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to BC557.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeHTS CodePower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingWeightMax Breakdown VoltageHeightLengthWidthView Compare
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BC557Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulk1996e1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLE500mWSWITCHINGPNPPNP110 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V100mA150MHz150MHzROHS3 Compliant----------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJTape & Box (TB)2002e0-Obsolete1 (Unlimited)3Tin/Lead (Sn/Pb)BOTTOM235303-Not Qualified1--AMPLIFIERPNPPNP180 @ 2mA 5V100nA650mV @ 5mA, 100mA--280MHz-Non-RoHS CompliantThrough Hole3EAR99EUROPEAN PART NUMBEROther Transistors-65V625mWnot_compliant-100mA280MHzBC556Single625mW280MHz650mV100mA65V-300mV-80V5V180Contains Lead-----------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulk2009e3-Obsolete1 (Unlimited)3Matte Tin (Sn)BOTTOM250403O-PBCY-T3Not Qualified1SINGLE500mWAMPLIFIERNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA100MHz100MHzROHS3 Compliant--EAR99LOW NOISEOther Transistors--unknown--BC550-----------8541.21.00.950.625W0.6 V--------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3-BOTTOMNOT SPECIFIEDNOT SPECIFIED--Not Qualified1--SWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz-ROHS3 CompliantThrough Hole3EAR99-Other Transistors-65V500mW--100mA150MHzBC556Single500mW150MHz65V100mA65V-250mV-80V-5V110Lead Free---ACTIVE (Last Updated: 4 days ago)2 WeeksTin240mg65V5.33mm5.2mm4.19mm
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