ON Semiconductor BC556B

Name: BC556B
Brand: ON Semiconductor
SKU: 2468092-BC556B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC556B

Manufacturer:: ON Semiconductor

Ventron No:: 2468092-BC556B

Description:: TRANS PNP 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC556, 557, 558

Specifications

ON Semiconductor BC556B technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC556B.

Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Transistor Type:
PNP
Supplier Device Package:
TO-92-3
Series:
-
Power - Max:
625mW
Packaging:
Bulk
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 2mA, 5V
Current - Collector Cutoff (Max):
100nA
Current - Collector (Ic) (Max):
100mA

Description

part No. BC556B Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

BC556B More Descriptions

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 180 @ 2mA 5V 100mA 625mW 150MHz
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:110; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Device Marking:BC556B; Gain Bandwidth ft Typ:150MHz; Hfe Min:200; Package / Case:TO-92; Power Dissipation Pd:500mW; Termination Type:Through Hole
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V 7.6A Ta -55°C~175°C TJ MOSFET Pwr MOSFET 60V 20A 24mOhm SGL N-CH

Product Comparison

The three parts on the right have similar specifications to BC556B.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Surface Mount

HTS Code

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

Lifecycle Status

Factory Lead Time

Contact Plating

Weight

Pbfree Code

Max Breakdown Voltage

Height

Length

Width

View Compare
BC556B

ON Semiconductor

65V

650mV @ 5mA, 100mA

PNP

TO-92-3

-

625mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

280MHz

180 @ 2mA, 5V

100nA

100mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC556BZL1

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2002

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

Other Transistors

-65V

625mW

BOTTOM

235

not_compliant

-100mA

280MHz

30

BC556

3

Not Qualified

1

Single

625mW

AMPLIFIER

280MHz

PNP

PNP

650mV

100mA

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

65V

280MHz

-300mV

-80V

5V

180

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC556B vs BC556BZL1
BC550C,112

NXP USA Inc.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

SILICON

150°C TJ

Bulk

2009

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOW NOISE

Other Transistors

-

-

BOTTOM

250

unknown

-

-

40

BC550

3

Not Qualified

1

-

-

AMPLIFIER

-

NPN

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

100MHz

-

-

-

-

ROHS3 Compliant

-

NO

8541.21.00.95

O-PBCY-T3

SINGLE

500mW

45V

100mA

100MHz

0.625W

0.6 V

-

-

-

-

-

-

-

-

-

BC556B vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

150°C TJ

Tape & Reel (TR)

2007

e3

Active

1 (Unlimited)

3

EAR99

-

-

Other Transistors

-65V

500mW

BOTTOM

NOT SPECIFIED

-

-100mA

150MHz

NOT SPECIFIED

BC556

-

Not Qualified

1

Single

500mW

SWITCHING

150MHz

PNP

PNP

65V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

150MHz

-250mV

-80V

-5V

110

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

240mg

yes

65V

5.33mm

5.2mm

4.19mm

BC556B vs BC556BTFR