Fairchild/ON Semiconductor BC556B

Name: BC556B
Brand: Fairchild/ON Semiconductor
SKU: 2467454-BC556B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC556B

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467454-BC556B

Description:: TRANS PNP 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC556, 557, 558

Specifications

Fairchild/ON Semiconductor BC556B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC556B.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
150MHz
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant

Description

BC556B Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 65V maximal voltage in the device due to collector-emitter breakdown.

BC556B Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz

BC556B Applications
There are a lot of Rochester Electronics, LLC
BC556B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC556B More Descriptions

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 180 @ 2mA 5V 100mA 625mW 150MHz
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:110; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Device Marking:BC556B; Gain Bandwidth ft Typ:150MHz; Hfe Min:200; Package / Case:TO-92; Power Dissipation Pd:500mW; Termination Type:Through Hole
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V 7.6A Ta -55°C~175°C TJ MOSFET Pwr MOSFET 60V 20A 24mOhm SGL N-CH

Product Comparison

The three parts on the right have similar specifications to BC556B.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Published

ECCN Code

Additional Feature

HTS Code

Subcategory

Reach Compliance Code

Base Part Number

Power Dissipation-Max (Abs)

VCEsat-Max

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Lead Free

Terminal Form

Case Connection

REACH SVHC

Radiation Hardening

View Compare
BC556B

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

-55°C~150°C TJ

Bulk

e0

yes

Obsolete

1 (Unlimited)

3

TIN LEAD

BOTTOM

240

30

3

O-PBCY-T3

COMMERCIAL

1

SINGLE

625mW

SWITCHING

PNP

PNP

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

65V

100mA

150MHz

280MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC550C,112

NXP USA Inc.

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

150°C TJ

Bulk

e3

-

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

BOTTOM

250

40

3

O-PBCY-T3

Not Qualified

1

SINGLE

500mW

AMPLIFIER

NPN

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

100mA

100MHz

100MHz

ROHS3 Compliant

2009

EAR99

LOW NOISE

8541.21.00.95

Other Transistors

unknown

BC550

0.625W

0.6 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC556B vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

SILICON

150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

-

BOTTOM

NOT SPECIFIED

NOT SPECIFIED

-

-

Not Qualified

1

-

-

SWITCHING

PNP

PNP

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

-

-

150MHz

-

ROHS3 Compliant

2007

EAR99

-

-

Other Transistors

-

BC556

-

-

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

3

240mg

-65V

500mW

-100mA

150MHz

Single

500mW

150MHz

65V

100mA

65V

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

Lead Free

-

-

-

-

BC556B vs BC556BTFR
BC550CTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

SILICON

150°C TJ

Tape & Box (TB)

e3

yes

Active

1 (Unlimited)

3

-

BOTTOM

-

-

-

-

-

1

-

-

SWITCHING

NPN

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

300MHz

-

ROHS3 Compliant

2002

EAR99

-

-

Other Transistors

-

BC550

-

-

-

7 Weeks

Tin

Through Hole

3

240mg

45V

500mW

100mA

300MHz

Single

500mW

300MHz

45V

100mA

45V

250mV

45V

50V

5V

110

4.58mm

4.58mm

3.86mm

Lead Free

WIRE

ISOLATED

No SVHC

No

BC556B vs BC550CTA