Fairchild/ON Semiconductor BC550CBU

Name: BC550CBU
Brand: Fairchild/ON Semiconductor
SKU: 2845116-BC550CBU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC550CBU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2845116-BC550CBU

Description:: TRANS NPN 45V 0.1A TO-92

ECAD Model:

Datasheet:: BC550CBU

Specifications

Fairchild/ON Semiconductor BC550CBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC550CBU.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC550
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC550CBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.

BC550CBU Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC550CBU Applications
There are a lot of ON Semiconductor
BC550CBU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC550CBU More Descriptions

Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC550 Series 45 V 100 mA Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT NPN 45V 0.1A 500mW 3-Pin TO-92 Bag
Bipolar Transistors - BJT NPN 45V 100mA HFE/800
45V 500mW 100mA 420@2mA5V 300MHz 250mV@100mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR NPN 45V 100MA TO-92
Darlington Transistor, TO-92, NPN, 45V
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 420hFE; T

Product Comparison

The three parts on the right have similar specifications to BC550CBU.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

View Compare
BC550CBU

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

7 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

179mg

SILICON

150°C TJ

Bulk

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

500mW

BOTTOM

WIRE

100mA

300MHz

BC550

1

Single

500mW

ISOLATED

SWITCHING

300MHz

NPN

NPN

45V

100mA

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

300MHz

250mV

50V

50V

5V

110

4.58mm

4.58mm

3.86mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC550C,112

NXP USA Inc.

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

SILICON

150°C TJ

Bulk

2009

e3

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-

-

BOTTOM

-

-

-

BC550

1

-

-

-

AMPLIFIER

-

NPN

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

100MHz

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

Matte Tin (Sn)

LOW NOISE

8541.21.00.95

250

unknown

40

3

O-PBCY-T3

Not Qualified

SINGLE

500mW

45V

100mA

100MHz

0.625W

0.6 V

BC550CBU vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-65V

500mW

BOTTOM

-

-100mA

150MHz

BC556

1

Single

500mW

-

SWITCHING

150MHz

PNP

PNP

65V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

150MHz

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

-

-

-

-

-

-

-

BC550CBU vs BC556BTFR
BC550CTA

Fairchild/ON Semiconductor

-

7 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Box (TB)

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

500mW

BOTTOM

WIRE

100mA

300MHz

BC550

1

Single

500mW

ISOLATED

SWITCHING

300MHz

NPN

NPN

45V

100mA

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

300MHz

250mV

45V

50V

5V

110

4.58mm

4.58mm

3.86mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC550CBU vs BC550CTA