Fairchild/ON Semiconductor BC33725TA

Name: BC33725TA
Brand: Fairchild/ON Semiconductor
SKU: 2462941-BC33725TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC33725TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2462941-BC33725TA

Description:: TRANS NPN 45V 0.8A TO-92

ECAD Model:

Datasheet:: BC33725TA

Specifications

Fairchild/ON Semiconductor BC33725TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC33725TA.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Frequency
100MHz
Base Part Number
BC337
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Height
8.77mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC33725TA Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 45V volts can be used.A maximum collector current of 800mA volts is possible.

BC33725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BC33725TA Applications
There are a lot of ON Semiconductor
BC33725TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC33725TA More Descriptions

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92
BIPOLAR Transistor, NPN, 45V, TO-92; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V;
Bipolar Transistors - BJT NPN 45V 800mA HFE/400
45V 625mW 800mA 160@100mA1V 100MHz 700mV@500mA50mA NPN 150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.

Certification