Fairchild/ON Semiconductor BC32825BU
- Part Number:
- BC32825BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585341-BC32825BU
- Description:
- TRANS PNP 25V 0.8A TO-92
- Datasheet:
- BC32825BU
Fairchild/ON Semiconductor BC32825BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC32825BU.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-25V
- Max Power Dissipation625mW
- Current Rating-800mA
- Base Part NumberBC328
- Element ConfigurationSingle
- Gain Bandwidth Product100MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage25V
- Current - Collector (Ic) (Max)800mA
- Collector Emitter Saturation Voltage-25V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Continuous Collector Current-800mA
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC32825BU Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -25V.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -800mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 800mA volts is possible.
BC32825BU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -25V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
BC32825BU Applications
There are a lot of ON Semiconductor
BC32825BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -25V.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -800mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 800mA volts is possible.
BC32825BU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -25V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
BC32825BU Applications
There are a lot of ON Semiconductor
BC32825BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC32825BU More Descriptions
Trans GP BJT PNP 25V 0.8A 3-Pin TO-92 Bulk
Compliant Through Hole 100 PNP Lead Free Bulk TO-226-3 -800 mA
MOSFET N-CH 40V SO8FL
Compliant Through Hole 100 PNP Lead Free Bulk TO-226-3 -800 mA
MOSFET N-CH 40V SO8FL
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