ON Semiconductor BC327-25RL1G
- Part Number:
- BC327-25RL1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2847121-BC327-25RL1G
- Description:
- TRANS PNP 45V 0.8A TO-92
- Datasheet:
- BC327-25RL1G
ON Semiconductor BC327-25RL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC327-25RL1G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.5W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)800mA
- Frequency - Transition260MHz
- RoHS StatusROHS3 Compliant
BC327-25RL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC327-25RL1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC327-25RL1G Applications
There are a lot of Rochester Electronics, LLC
BC327-25RL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC327-25RL1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC327-25RL1G Applications
There are a lot of Rochester Electronics, LLC
BC327-25RL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC327-25RL1G More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Reel (TR) Through Hole PNP Single Bipolar (BJT) Transistor 160 @ 100mA 1V 100nA 1.5W 260MHz
Trans GP BJT PNP 45V 0.8A 3-Pin TO-92 T/R - Tape and Reel
BIPOLAR Transistor, PNP, -45V TO-92; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; Collector Emitter Saturation Voltage, Vce(sat):160V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):160; Package/Case:TO-92 ;RoHS Compliant: Yes
Tape & Reel (TR) Through Hole PNP Single Bipolar (BJT) Transistor 160 @ 100mA 1V 100nA 1.5W 260MHz
Trans GP BJT PNP 45V 0.8A 3-Pin TO-92 T/R - Tape and Reel
BIPOLAR Transistor, PNP, -45V TO-92; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; Collector Emitter Saturation Voltage, Vce(sat):160V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):160; Package/Case:TO-92 ;RoHS Compliant: Yes
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