Fairchild/ON Semiconductor BC308C
- Part Number:
- BC308C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467511-BC308C
- Description:
- TRANS PNP 25V 0.1A TO-92
- Datasheet:
- BC307-09
Fairchild/ON Semiconductor BC308C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC308C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-25V
- Max Power Dissipation500mW
- Current Rating-100mA
- Frequency130MHz
- Base Part NumberBC308
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max500mW
- Gain Bandwidth Product130MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce380 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage25V
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition130MHz
- Collector Base Voltage (VCBO)-5V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC308C Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC308C Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
the supplier device package of TO-92-3
BC308C Applications
There are a lot of ON Semiconductor
BC308C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC308C Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
the supplier device package of TO-92-3
BC308C Applications
There are a lot of ON Semiconductor
BC308C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC308C More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP Epitaxial Silicon Transistor 25V 100mA TO-92 with Current Gain 380-800
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
PNP Epitaxial Silicon Transistor 25V 100mA TO-92 with Current Gain 380-800
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
The three parts on the right have similar specifications to BC308C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeView Compare
-
BC308CThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3150°C TJBulkObsolete1 (Unlimited)150°C-55°C-25V500mW-100mA130MHzBC3081PNPSingle500mW500mW130MHzPNP500mV100mA380 @ 2mA 5V15nA500mV @ 5mA, 100mA25V25V100mA130MHz-5V-5V120RoHS CompliantLead Free-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)-TO-92-3150°C TJBulkObsolete1 (Unlimited)-----------500mW-PNP--120 @ 2mA 5V15nA500mV @ 5mA, 100mA-25V100mA130MHz---ROHS3 Compliant-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)Obsolete1 (Unlimited)------BC308----500mW-PNP--120 @ 2mA 5V15nA500mV @ 5mA, 100mA-25V100mA130MHz-----
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)-TO-92-3150°C TJBulkObsolete1 (Unlimited)------BC309----500mW-PNP--120 @ 2mA 5V15nA500mV @ 5mA, 100mA-25V100mA130MHz-----
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
03 January 2024
Application Guide for LL4148 Small Signal Diode
Ⅰ. Overview of LL4148Ⅱ. Working principle of LL4148 diodeⅢ. Technical parameters of LL4148 diodeⅣ. Electrical characteristics of LL4148 diodeⅤ. Where is LL4148 diode used?Ⅵ. What is the difference between LL4148... -
03 January 2024
Exploring the 2SK2225 Transistor's Capabilities
Ⅰ. Introduction to 2SK2225Ⅱ. Specifications of 2SK2225Ⅲ. The manufacturer of 2SK2225Ⅳ. Absolute maximum ratings of 2SK2225Ⅴ. How to use 2SK2225?Ⅵ. Where is 2SK2225 used?Ⅶ. How to improve the... -
04 January 2024
ULN2003ADR: A Powerful Chip that Drives High Current Loads
Ⅰ. ULN2003ADR descriptionⅡ. Symbol, footprint and pin configuration of ULN2003ADRⅢ. Specifications of ULN2003ADRⅣ. What are the application fields of ULN2003ADR?Ⅴ. Simplified block diagram of ULN2003ADRⅥ. How to correctly... -
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.