ON Semiconductor BC237BG
- Part Number:
- BC237BG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468105-BC237BG
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC237BG
ON Semiconductor BC237BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC237BG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Contact PlatingCopper, Silver, Tin
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC237
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product200MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage200mV
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC237BG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC237BG Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BG Applications
There are a lot of ON Semiconductor
BC237BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC237BG Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BG Applications
There are a lot of ON Semiconductor
BC237BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC237BG More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor Amplifier NPN 45V 100mA TO92 | ON Semiconductor BC237BG
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin TO-92 Box
TRANSISTOR, NPN, 45V, 100MA, TO-92
TRANSISTOR, NPN, 45V, 100MA, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 350mW; DC Collector Current: 100mA; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 200; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: d; Power Dissipation Ptot Max: 350mW; Voltage Vcbo: 50V
Transistor Amplifier NPN 45V 100mA TO92 | ON Semiconductor BC237BG
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin TO-92 Box
TRANSISTOR, NPN, 45V, 100MA, TO-92
TRANSISTOR, NPN, 45V, 100MA, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 350mW; DC Collector Current: 100mA; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 200; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: d; Power Dissipation Ptot Max: 350mW; Voltage Vcbo: 50V
The three parts on the right have similar specifications to BC237BG.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountHTS CodeQualification StatusContinuous Collector CurrentSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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BC237BGLAST SHIPMENTS (Last Updated: 1 day ago)Copper, Silver, TinThrough HoleTO-226-3, TO-92-3 (TO-226AA)NO34.535924gSILICON-55°C~150°C TJBulk2007e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors45V1WBOTTOM260100mA200MHz40BC23731Single350mWAMPLIFIER200MHzNPNNPN45V100mA200 @ 2mA 5V15nA600mV @ 5mA, 100mA45V200MHz200mV50V6V2005.33mm5.2mm4.19mmNo SVHCNoRoHS CompliantLead Free----------
-
OBSOLETE (Last Updated: 1 week ago)-Through HoleTO-226-3, TO-92-3 (TO-226AA)-3-SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors25V350mWBOTTOM260100mA-40BC23931Single-AMPLIFIER280MHzNPNNPN600mV100mA380 @ 2mA 5V15nA600mV @ 5mA, 100mA25V280MHz200mV30V5V270-----RoHS CompliantLead FreeThrough Hole8541.21.00.75Not Qualified100mA-----
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA)----150°C TJBulk---Obsolete1 (Unlimited)-----------BC238-------NPN--120 @ 2mA 5V15nA600mV @ 5mA, 100mA-----------------TO-92-3500mW25V100mA250MHz
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------BC237-------NPN--120 @ 2mA 5V15nA600mV @ 5mA, 100mA-----------------TO-92-3500mW45V100mA250MHz
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