Fairchild/ON Semiconductor BC237A
- Part Number:
- BC237A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813481-BC237A
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC237/238/239
Fairchild/ON Semiconductor BC237A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC237A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC45V
- Max Power Dissipation500mW
- Current Rating100mA
- Frequency250MHz
- Base Part NumberBC237
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max500mW
- Gain Bandwidth Product250MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min120
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC237A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 100mA volts.
BC237A Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
the supplier device package of TO-92-3
BC237A Applications
There are a lot of ON Semiconductor
BC237A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 100mA volts.
BC237A Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
the supplier device package of TO-92-3
BC237A Applications
There are a lot of ON Semiconductor
BC237A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC237A More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
NPN Epitaxial Silicon Transistor TO-92 with DC Current Gain 120-220
Trans GP BJT NPN 45V 0.1A 3-Pin TO-92 Bulk
NPN Epitaxial Silicon Transistor TO-92 with DC Current Gain 120-220
Trans GP BJT NPN 45V 0.1A 3-Pin TO-92 Bulk
The three parts on the right have similar specifications to BC237A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyView Compare
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BC237AThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3150°C TJBulkObsolete1 (Unlimited)150°C-55°C45V500mW100mA250MHzBC2371NPNSingle500mW500mW250MHzNPN45V100mA120 @ 2mA 5V15nA600mV @ 5mA, 100mA45V45V100mA250MHz50V6V120NoRoHS CompliantLead Free-------------------------------
-
--------------------------------------45V600mV @ 5mA, 100mANPNTO-92-3-350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole200MHz120 @ 2mA, 5V15nA100mA----------------
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-Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulkObsolete1 (Unlimited)------BC237----500mW-NPN--120 @ 2mA 5V15nA600mV @ 5mA, 100mA-45V100mA250MHz------------------------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulkObsolete1 (Unlimited)-------1---500mW-NPN--120 @ 2mA 5V15nA600mV @ 5mA, 100mA-25V100mA250MHz----ROHS3 Compliant---------------NOSILICONe3yes3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIALSINGLESWITCHINGNPN250MHz
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