Fairchild/ON Semiconductor BC213L
- Part Number:
- BC213L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585454-BC213L
- Description:
- TRANS PNP 30V 0.5A TO-92
- Datasheet:
- BC213L
Fairchild/ON Semiconductor BC213L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC213L.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-30V
- Max Power Dissipation625mW
- Current Rating-500mA
- Frequency200MHz
- Base Part NumberBC213
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Gain Bandwidth Product200MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)-5V
- hFE Min80
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC213L Overview
In this device, the DC current gain is 80 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC213L Features
the DC current gain for this device is 80 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
the supplier device package of TO-92-3
BC213L Applications
There are a lot of ON Semiconductor
BC213L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 80 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC213L Features
the DC current gain for this device is 80 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
the supplier device package of TO-92-3
BC213L Applications
There are a lot of ON Semiconductor
BC213L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC213L More Descriptions
Trans GP BJT PNP 30V 0.5A 3-Pin TO-92
Bipolar Transistors - BJT PNP -30V -500mA HFE/400
TRANSISTOR, PNP, TO-92; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:-0.25V; Power Dissipation:625mW; Min Hfe:80; Case ;RoHS Compliant: Yes
TRANSISTOR, PNP TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M
Bipolar Transistors - BJT PNP -30V -500mA HFE/400
TRANSISTOR, PNP, TO-92; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:-0.25V; Power Dissipation:625mW; Min Hfe:80; Case ;RoHS Compliant: Yes
TRANSISTOR, PNP TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M
The three parts on the right have similar specifications to BC213L.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeView Compare
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BC213LThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3-55°C~150°C TJBulk2009Obsolete1 (Unlimited)150°C-55°C-30V625mW-500mA200MHzBC2131PNPSingle625mW625mW200MHzPNP30V500mA80 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA30V30V500mA200MHz45V-5V80NoRoHS CompliantLead Free-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)------BC212----625mW-PNP--60 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-50V300mA-------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3-55°C~150°C TJBulk-Obsolete1 (Unlimited)------BC214----625mW-PNP--140 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-30V500mA200MHz------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3-55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)------BC212----350mW-PNP--60 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-50V100mA-------
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