ON Semiconductor BC212BRL1

Name: BC212BRL1
Brand: ON Semiconductor
SKU: 2467994-BC212BRL1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC212BRL1

Manufacturer:: ON Semiconductor

Ventron No:: 2467994-BC212BRL1

Description:: TRANS PNP 50V 0.1A TO-92

ECAD Model:

Datasheet:: BC212B

Specifications

ON Semiconductor BC212BRL1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC212BRL1.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
Frequency
280MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BC212
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
280MHz
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BC212BRL1 Overview
This device has a DC current gain of 60 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 280MHz.A maximum collector current of 100mA volts is possible.

BC212BRL1 Features
the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC212BRL1 Applications
There are a lot of ON Semiconductor
BC212BRL1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC212BRL1 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA
Compliant Through Hole 40 PNP 280 MHz Contains Lead TO-92-3 -100 mA
Transistor Silicon Plastic PNP
Trans MOSFET N-CH 40V 120A 5-Pin DFN T/R

Product Comparison

The three parts on the right have similar specifications to BC212BRL1.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Surface Mount

Terminal Form

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

Collector-Base Capacitance-Max

Supplier Device Package

Max Breakdown Voltage

View Compare
BC212BRL1

ON Semiconductor

LAST SHIPMENTS (Last Updated: 6 days ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

Other Transistors

-50V

350mW

BOTTOM

240

not_compliant

-100mA

280MHz

30

BC212

3

Not Qualified

1

Single

350mW

AMPLIFIER

280MHz

PNP

PNP

600mV

100mA

60 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

50V

280MHz

-250mV

-60V

5V

40

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-
BC214LB

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

SILICON

-55°C~150°C TJ

Bulk

-

-

-

Obsolete

1 (Unlimited)

3

-

-

-

Other Transistors

-

-

BOTTOM

-

unknown

-

-

-

BC214

-

Not Qualified

1

-

-

-

-

PNP

PNP

-

-

140 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

150MHz

-

-

-

-

-

-

NO

WIRE

O-PBCY-W3

SINGLE

625mW

30V

500mA

200MHz

0.5W

4.5pF

-

-

BC212BRL1 vs BC214LB
BC214LC_J35Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Bulk

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

BC214

-

-

-

-

-

-

-

-

PNP

-

-

140 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

-

-

-

-

-

-

-

-

625mW

30V

500mA

200MHz

-

-

TO-92-3

-

BC212BRL1 vs BC214LC_J35Z
BC212B

Fairchild/ON Semiconductor

OBSOLETE (Last Updated: 4 days ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

SILICON

-55°C~150°C TJ

Bulk

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

Other Transistors

-50V

350mW

BOTTOM

240

not_compliant

-100mA

-

30

BC212

3

Not Qualified

1

Single

350mW

AMPLIFIER

280MHz

PNP

PNP

600mV

100mA

60 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

50V

280MHz

-250mV

-60V

5V

40

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

50V

BC212BRL1 vs BC212B