Fairchild/ON Semiconductor BC183C
- Part Number:
- BC183C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467473-BC183C
- Description:
- TRANS NPN 30V 0.1A TO-92
- Datasheet:
- BC183C
Fairchild/ON Semiconductor BC183C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC183C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight200mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Voltage - Rated DC30V
- Max Power Dissipation350mW
- Current Rating100mA
- Frequency150MHz
- Base Part NumberBC183
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product150MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)6V
- hFE Min120
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC183C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.A maximum collector current of 100mA volts can be achieved.
BC183C Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
BC183C Applications
There are a lot of ON Semiconductor
BC183C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.A maximum collector current of 100mA volts can be achieved.
BC183C Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
BC183C Applications
There are a lot of ON Semiconductor
BC183C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC183C More Descriptions
Bipolar Transistors - BJT NPN 30V 100mA
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:0.25V; Power Dissipation:350mW; Min Hfe:450; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:2mA; Device Marking:BC183C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:450; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Voltage Vcbo:45V
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:0.25V; Power Dissipation:350mW; Min Hfe:450; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:2mA; Device Marking:BC183C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:450; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Voltage Vcbo:45V
The three parts on the right have similar specifications to BC183C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)DC Current Gain-Min (hFE)Collector-Base Capacitance-MaxView Compare
-
BC183CThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3200mg-55°C~150°C TJBulk2004Obsolete1 (Unlimited)Through Hole30V350mW100mA150MHzBC1831Single350mW150MHzNPN30V100mA120 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA30V45V6V120No SVHCRoHS CompliantLead Free--------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)-----BC182----NPN--120 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-------350mW50V100mA150MHz---------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)-----BC182----NPN--120 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-------350mW50V100mA150MHz---------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk-Obsolete1 (Unlimited)-----BC1821---NPN-------------50V100mA-NOSILICON3Other TransistorsBOTTOMWIREunknownO-PBCY-W3Not QualifiedSINGLENPN150MHz0.5W1204.5pF
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