ON Semiconductor BC182B
- Part Number:
- BC182B
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585631-BC182B
- Description:
- TRANS NPN 50V 0.1A TO-92
- Datasheet:
- BC182B BC182(A, B)
ON Semiconductor BC182B technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC182B.
- Voltage - Collector Emitter Breakdown (Max):50V
- Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
- Transistor Type:NPN
- Supplier Device Package:TO-92-3
- Series:-
- Power - Max:350mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 5V
- Current - Collector Cutoff (Max):15nA (ICBO)
- Current - Collector (Ic) (Max):100mA
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BC182B More Descriptions
Transistor GP BJT NPN 50V 100mA 3-Pin TO-92Avnet Japan
Transistor, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:200MHz; Power Dissipation Pd:350mW;
Bipolar Transistor, Npn, 50V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:50V; Continuous Collector Current:100Ma; Power Dissipation:350Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro BC182B
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 350mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 120MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 120; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: d; Power Dissipation Ptot Max: 350mW; Termination Type: Through Hole; Voltage Vcbo: 60V
Transistor, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:200MHz; Power Dissipation Pd:350mW;
Bipolar Transistor, Npn, 50V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:50V; Continuous Collector Current:100Ma; Power Dissipation:350Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro BC182B
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 350mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 120MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 120; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: d; Power Dissipation Ptot Max: 350mW; Termination Type: Through Hole; Voltage Vcbo: 60V
The three parts on the right have similar specifications to BC182B.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeQualification StatusNumber of ElementsConfigurationPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)DC Current Gain-Min (hFE)Collector-Base Capacitance-MaxView Compare
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BC182B50V600mV @ 5mA, 100mANPNTO-92-3-350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole200MHz180 @ 2mA, 5V15nA (ICBO)100mA--------------------------------
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--------------Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC182350mWNPN120 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA50V100mA150MHz----------------
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--------------Through HoleTO-226-3, TO-92-3 (TO-226AA)-55°C~150°C TJBulkObsolete1 (Unlimited)BC182-NPN---50V100mA-NOSILICON3Other TransistorsBOTTOMWIREunknownO-PBCY-W3Not Qualified1SINGLENPN150MHz0.5W1204.5pF
-
--------------Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Reel (TR)Obsolete1 (Unlimited)BC184350mWNPN130 @ 100mA 5V15nA ICBO250mV @ 5mA, 100mA30V500mA150MHz----------------
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