Alliance Memory, Inc. AS6C1016-55BINTR
- Part Number:
- AS6C1016-55BINTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3720185-AS6C1016-55BINTR
- Description:
- IC SRAM 1MBIT 55NS 48TFBGA
- Datasheet:
- AS6C1016-55BINTR
Alliance Memory, Inc. AS6C1016-55BINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C1016-55BINTR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2007
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply2.7V~5.5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page55ns
- RoHS StatusROHS3 Compliant
AS6C1016-55BINTR Overview
The SRAM - Asynchronous technology is a popular choice for its reliable performance, making it suitable for a wide range of applications. With a memory size of 1Mb 64K x 16 and a parallel memory interface, it offers efficient data storage and retrieval. The 48 pins allow for easy integration into various electronic devices, while the operating temperature range of -40°C~85°C TA ensures its functionality in extreme environments. Packaged in Tape & Reel (TR), it is convenient for automated assembly processes. Although the Reach Compliance Code is unknown, the RoHS3 Compliance status guarantees its environmental friendliness. Moreover, with a write cycle time of 55ns for both word and page, it offers fast and efficient data transfer. The Time@Peak Reflow Temperature-Max (s) is not specified, but this does not affect its overall performance.
AS6C1016-55BINTR Features
Package / Case: 48-TFBGA
48 Pins
AS6C1016-55BINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C1016-55BINTR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The SRAM - Asynchronous technology is a popular choice for its reliable performance, making it suitable for a wide range of applications. With a memory size of 1Mb 64K x 16 and a parallel memory interface, it offers efficient data storage and retrieval. The 48 pins allow for easy integration into various electronic devices, while the operating temperature range of -40°C~85°C TA ensures its functionality in extreme environments. Packaged in Tape & Reel (TR), it is convenient for automated assembly processes. Although the Reach Compliance Code is unknown, the RoHS3 Compliance status guarantees its environmental friendliness. Moreover, with a write cycle time of 55ns for both word and page, it offers fast and efficient data transfer. The Time@Peak Reflow Temperature-Max (s) is not specified, but this does not affect its overall performance.
AS6C1016-55BINTR Features
Package / Case: 48-TFBGA
48 Pins
AS6C1016-55BINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C1016-55BINTR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
AS6C1016-55BINTR More Descriptions
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 48-Pin TFBGA
Low Power CMOS SRAM 1MB 48ball TFBGA 2.7-5V 64K x 16
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
IC SRAM 1MBIT PARALLEL 48TFBGA
Low Power CMOS SRAM 1MB 48ball TFBGA 2.7-5V 64K x 16
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
IC SRAM 1MBIT PARALLEL 48TFBGA
The three parts on the right have similar specifications to AS6C1016-55BINTR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Memory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthQualification StatusOperating Supply VoltagePower SuppliesSupply Current-MaxOutput CharacteristicsDensityStandby Current-MaxI/O TypeStandby Voltage-MinLead FreeView Compare
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AS6C1016-55BINTR8 WeeksSurface Mount48-TFBGA48-40°C~85°C TATape & Reel (TR)2007yesActive3 (168 Hours)SRAM - Asynchronous2.7V~5.5VNOT SPECIFIEDunknownNOT SPECIFIED1Mb 64K x 16VolatileSRAMParallel55nsROHS3 Compliant----------------------------
-
8 WeeksSurface Mount48-LFBGA--40°C~85°C TATape & Reel (TR)--Active3 (168 Hours)CMOS2.7V~3.6VNOT SPECIFIED-NOT SPECIFIED32Mb 2M x 16VolatileSRAMParallel55nsROHS3 CompliantYES48BOTTOM13V0.75mmR-PBGA-B483.6V2.7VASYNCHRONOUS2MX161633554432 bit55 ns10mm1.4mm8mm----------
-
8 WeeksSurface Mount32-LFSOP (0.465, 11.80mm Width)--40°C~85°C TATape & Reel (TR)2006-Active3 (168 Hours)SRAM - Asynchronous2.7V~5.5V---4Mb 512K x 8VolatileSRAMParallel55nsRoHS CompliantYES32DUAL--0.5mmR-PDSO-G32---512KX88-55 ns---Not Qualified3V3/5V0.06mA3-STATE4 Mb0.00003ACOMMON1.5VLead Free
-
8 WeeksSurface Mount28-TSSOP (0.465, 11.80mm Width)28-40°C~85°C TATape & Reel (TR)2005yesActive3 (168 Hours)SRAM - Asynchronous2.7V~5.5VNOT SPECIFIEDunknownNOT SPECIFIED256Kb 32K x 8VolatileSRAMParallel55nsROHS3 Compliant---------------------------
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