Alliance Memory, Inc. AS6C3216A-55BIN
- Part Number:
- AS6C3216A-55BIN
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 7373621-AS6C3216A-55BIN
- Description:
- Memory IC 10mm mm
- Datasheet:
- AS6C3216A-55BIN
Alliance Memory, Inc. AS6C3216A-55BIN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C3216A-55BIN.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-LFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyCMOS
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size32Mb 2M x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization2MX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density33554432 bit
- Access Time (Max)55 ns
- Length10mm
- Height Seated (Max)1.4mm
- Width8mm
- RoHS StatusROHS3 Compliant
AS6C3216A-55BIN Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 48-LFBGA case. There is an 32Mb 2M x 16 memory capacity on the chip. In this device, the memory is of the SRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 48 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply.
AS6C3216A-55BIN Features
Package / Case: 48-LFBGA
AS6C3216A-55BIN Applications
There are a lot of Alliance Memory, Inc.
AS6C3216A-55BIN Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 48-LFBGA case. There is an 32Mb 2M x 16 memory capacity on the chip. In this device, the memory is of the SRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 48 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply.
AS6C3216A-55BIN Features
Package / Case: 48-LFBGA
AS6C3216A-55BIN Applications
There are a lot of Alliance Memory, Inc.
AS6C3216A-55BIN Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
AS6C3216A-55BIN More Descriptions
SRAM Memory IC 32Mb (2M x 16) Parallel 55 ns 48-TFBGA (8x10
SRAM Chip Async Single 3.3V 32Mbit 2M X 16 55ns 48-Pin TFBGA Tray
IC SRAM 32MBIT PARALLEL 48TFBGA
Product Description Demo for Development.
SRAM 32M 3V 55ns LP 2048Kx16 Asynch IT
SRAM Chip Async Single 3.3V 32Mbit 2M X 16 55ns 48-Pin TFBGA Tray
IC SRAM 32MBIT PARALLEL 48TFBGA
Product Description Demo for Development.
SRAM 32M 3V 55ns LP 2048Kx16 Asynch IT
The three parts on the right have similar specifications to AS6C3216A-55BIN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthRoHS StatusPbfree CodeHTS CodeAlternate Memory WidthJESD-609 CodeTerminal FinishPin CountView Compare
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AS6C3216A-55BIN8 WeeksSurface Mount48-LFBGAYES-40°C~85°C TATrayActive3 (168 Hours)48CMOS2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIEDR-PBGA-B483.6V2.7V32Mb 2M x 16VolatileASYNCHRONOUSSRAMParallel2MX161655ns33554432 bit55 ns10mm1.4mm8mmROHS3 Compliant-------
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)48SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.7V32Mb 2M x 16Volatile-SRAMParallel2MX161655ns33554432 bit55 ns18.4mm1.2mm12mmROHS3 Compliantyes8542.32.00.418---
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayActive3 (168 Hours)48CMOS2.7V~3.6VDUAL26013V0.5mm40R-PDSO-G483.6V2.7V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161655ns16777216 bit55 ns18.4mm1.2mm12mmROHS3 Compliantyes--e3/e6PURE MATTE TIN/TIN BISMUTH48
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayActive3 (168 Hours)48SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.7V32Mb 2M x 16Volatile-SRAMParallel2MX161655ns33554432 bit55 ns18.4mm1.2mm12mmROHS3 Compliantyes8542.32.00.418---
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