Alliance Memory, Inc. AS6C3216A-55TINTR
- Part Number:
- AS6C3216A-55TINTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 7373583-AS6C3216A-55TINTR
- Description:
- Memory IC 18.4mm mm
- Datasheet:
- AS6C3216A-55TINTR
Alliance Memory, Inc. AS6C3216A-55TINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C3216A-55TINTR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size32Mb 2M x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization2MX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density33554432 bit
- Access Time (Max)55 ns
- Alternate Memory Width8
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusROHS3 Compliant
AS6C3216A-55TINTR Overview
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 48-TFSOP (0.724, 18.40mm Width) case embedded in it. 32Mb 2M x 16 is the chip's memory size. SRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 48 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such.
AS6C3216A-55TINTR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
AS6C3216A-55TINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C3216A-55TINTR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 48-TFSOP (0.724, 18.40mm Width) case embedded in it. 32Mb 2M x 16 is the chip's memory size. SRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 48 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such.
AS6C3216A-55TINTR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
AS6C3216A-55TINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C3216A-55TINTR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
AS6C3216A-55TINTR More Descriptions
SRAM Chip Single 32Mbit 2M X 16/4M X 8 48-Pin TSOP-I T/R
Low Power CMOS SRAM 32MB 48pin TSOP I 3V 2048k x 16
IC SRAM 32MBIT PARALLEL 48TSOP I
SRAM 32M, 3V, 55ns 2048K x 16 Asyn SRAM
Low Power CMOS SRAM 32MB 48pin TSOP I 3V 2048k x 16
IC SRAM 32MBIT PARALLEL 48TSOP I
SRAM 32M, 3V, 55ns 2048K x 16 Asyn SRAM
The three parts on the right have similar specifications to AS6C3216A-55TINTR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Alternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusOperating ModeJESD-609 CodeTerminal FinishPin CountView Compare
-
AS6C3216A-55TINTR8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)yesActive3 (168 Hours)488542.32.00.41SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.7V32Mb 2M x 16VolatileSRAMParallel2MX161655ns33554432 bit55 ns818.4mm1.2mm12mmROHS3 Compliant-----
-
8 WeeksSurface Mount48-LFBGAYES-40°C~85°C TATray-Active3 (168 Hours)48-CMOS2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIEDR-PBGA-B483.6V2.7V32Mb 2M x 16VolatileSRAMParallel2MX161655ns33554432 bit55 ns-10mm1.4mm8mmROHS3 CompliantASYNCHRONOUS---
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayyesActive3 (168 Hours)48-CMOS2.7V~3.6VDUAL26013V0.5mm40R-PDSO-G483.6V2.7V16Mb 1M x 16VolatileSRAMParallel1MX161655ns16777216 bit55 ns-18.4mm1.2mm12mmROHS3 CompliantASYNCHRONOUSe3/e6PURE MATTE TIN/TIN BISMUTH48
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayyesActive3 (168 Hours)488542.32.00.41SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.7V32Mb 2M x 16VolatileSRAMParallel2MX161655ns33554432 bit55 ns818.4mm1.2mm12mmROHS3 Compliant----
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