Alliance Memory, Inc. AS6C6416-55TINTR
- Part Number:
- AS6C6416-55TINTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 7373709-AS6C6416-55TINTR
- Description:
- Memory IC 18.4mm mm
- Datasheet:
- AS6C6416-55TINTR
Alliance Memory, Inc. AS6C6416-55TINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C6416-55TINTR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size64Mb 4M x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization4MX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density67108864 bit
- Access Time (Max)55 ns
- Alternate Memory Width8
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusNon-RoHS Compliant
AS6C6416-55TINTR Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 48-TFSOP (0.724, 18.40mm Width) case, memory ics is a single file. On the chip, there is an 64Mb 4M x 16 memory, which is the size of the chip's memory. There is a SRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 48 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary.
AS6C6416-55TINTR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
AS6C6416-55TINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C6416-55TINTR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 48-TFSOP (0.724, 18.40mm Width) case, memory ics is a single file. On the chip, there is an 64Mb 4M x 16 memory, which is the size of the chip's memory. There is a SRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 48 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary.
AS6C6416-55TINTR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
AS6C6416-55TINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C6416-55TINTR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
AS6C6416-55TINTR More Descriptions
SRAM Chip Single 64Mbit 4M X 16 48-Pin TSOP-I T/R
IC SRAM 64MBIT PARALLEL 48TSOP I
SRAM 64M 3V 55ns Low Power 4048k x 16
IC SRAM 64MBIT PARALLEL 48TSOP I
SRAM 64M 3V 55ns Low Power 4048k x 16
The three parts on the right have similar specifications to AS6C6416-55TINTR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Alternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusOperating ModeJESD-609 CodePbfree CodeTerminal FinishPin CountView Compare
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AS6C6416-55TINTR8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)488542.32.00.41SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.7V64Mb 4M x 16VolatileSRAMParallel4MX161655ns67108864 bit55 ns818.4mm1.2mm12mmNon-RoHS Compliant------
-
8 WeeksSurface Mount48-LFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SRAM - Asynchronous2.7V~3.6V-NOT SPECIFIED---NOT SPECIFIED---64Mb 4M x 16VolatileSRAMParallel--55ns------ROHS3 Compliant-----
-
8 WeeksSurface Mount48-LFBGAYES-40°C~85°C TATrayActive3 (168 Hours)48-CMOS2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIEDR-PBGA-B483.6V2.7V32Mb 2M x 16VolatileSRAMParallel2MX161655ns33554432 bit55 ns-10mm1.4mm8mmROHS3 CompliantASYNCHRONOUS----
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayActive3 (168 Hours)48-CMOS2.7V~3.6VDUAL26013V0.5mm40R-PDSO-G483.6V2.7V16Mb 1M x 16VolatileSRAMParallel1MX161655ns16777216 bit55 ns-18.4mm1.2mm12mmROHS3 CompliantASYNCHRONOUSe3/e6yesPURE MATTE TIN/TIN BISMUTH48
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