NXP USA Inc. AFV121KGSR5
- Part Number:
- AFV121KGSR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477515-AFV121KGSR5
- Description:
- IC TRANS RF LDMOS
- ECAD Model:
-
- Datasheet:
- AFV121KGSR5
NXP USA Inc. AFV121KGSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFV121KGSR5.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4S GW
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated112V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency960MHz~1.22GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test100mA
- Transistor TypeLDMOS (Dual)
- Gain19.6dB
- Power - Output1000W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
AFV121KGSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFV121KGSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFV121KGSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFV121KGSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFV121KGSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFV121KGSR5 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1806
19.6 dB Compliant 960 MHz Tape & Reel (TR) 1 kW 100 mA 50 V 112 V
Trans RF FET N-CH 112V 5-Pin NI-1230S T/R
IC REG LINEAR 3.3V 100MA DPAK-3
RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1806
19.6 dB Compliant 960 MHz Tape & Reel (TR) 1 kW 100 mA 50 V 112 V
Trans RF FET N-CH 112V 5-Pin NI-1230S T/R
IC REG LINEAR 3.3V 100MA DPAK-3
The three parts on the right have similar specifications to AFV121KGSR5.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusView Compare
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AFV121KGSR510 WeeksNI-1230-4S GWTape & Reel (TR)2015ActiveNot ApplicableEAR99112V8541.29.00.75NOT SPECIFIED960MHz~1.22GHzNOT SPECIFIED100mALDMOS (Dual)19.6dB1000W50VROHS3 Compliant- -
10 WeeksSOT-979ATape & Reel (TR)2016ActiveNot ApplicableEAR99105V8541.29.00.75NOT SPECIFIED1.4GHzNOT SPECIFIED100mALDMOS (Dual)17.7dB1000W50VROHS3 Compliant
-
10 WeeksNI-1230-4S GWTape & Reel (TR)2016ActiveNot ApplicableEAR99105V-NOT SPECIFIED1.4GHzNOT SPECIFIED100mALDMOS (Dual)17.7dB1000W50VROHS3 Compliant
-
10 WeeksNI-1230-4STape & Reel (TR)2012ActiveNot ApplicableEAR99112V8541.29.00.75NOT SPECIFIED960MHz~1.22GHzNOT SPECIFIED100mALDMOS (Dual)19.6dB1000W50VROHS3 Compliant
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