IDT, Integrated Device Technology Inc 7164L20TDB
- Part Number:
- 7164L20TDB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3722308-7164L20TDB
- Description:
- IC SRAM 64KBIT 20NS 28CDIP
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 7164L20TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164L20TDB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.300, 7.62mm)
- Supplier Device Package28-CDIP
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Access Time20ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page20ns
- RoHS StatusNon-RoHS Compliant
7164L20TDB Overview
The product features a Through Hole mounting type, making it suitable for applications that require a secure and permanent connection. It is designed with a 28-CDIP Supplier Device Package, ensuring high reliability and durability. The product is packaged in a tube, providing protection during transportation and storage. With an Active part status, customers can be assured of its availability and continued support. The technology used is SRAM - Asynchronous, offering fast and efficient data access. The product has a memory size of 64Kb 8K x 8, making it ideal for storing large amounts of data. It is a volatile memory type, meaning data is lost when power is turned off. The access time is 20ns, ensuring quick retrieval of data. The memory format is SRAM, providing high-speed read and write operations. The write cycle time for both word and page is 20ns, further enhancing its performance.
7164L20TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
7164L20TDB Applications
There are a lot of Renesas Electronics America Inc.
7164L20TDB Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The product features a Through Hole mounting type, making it suitable for applications that require a secure and permanent connection. It is designed with a 28-CDIP Supplier Device Package, ensuring high reliability and durability. The product is packaged in a tube, providing protection during transportation and storage. With an Active part status, customers can be assured of its availability and continued support. The technology used is SRAM - Asynchronous, offering fast and efficient data access. The product has a memory size of 64Kb 8K x 8, making it ideal for storing large amounts of data. It is a volatile memory type, meaning data is lost when power is turned off. The access time is 20ns, ensuring quick retrieval of data. The memory format is SRAM, providing high-speed read and write operations. The write cycle time for both word and page is 20ns, further enhancing its performance.
7164L20TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
7164L20TDB Applications
There are a lot of Renesas Electronics America Inc.
7164L20TDB Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
7164L20TDB More Descriptions
Asynchronous Active 3-STATE 2007 (Memory Format) Memory 125C 5.5V 64kb 100mA
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin CDIP
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CDIP
SRAM 64K(8KX8) BICMOS STAT RAM
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin CDIP
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CDIP
SRAM 64K(8KX8) BICMOS STAT RAM
The three parts on the right have similar specifications to 7164L20TDB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusBase Part NumberView Compare
-
7164L20TDB15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)28-CDIP-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile20nsSRAMParallel20nsNon-RoHS Compliant--
-
15 WeeksSurface Mount28-BSOJ (0.300, 7.62mm Width)28-SOJ-40°C~85°C TATubeActive3 (168 Hours)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile25nsSRAMParallel25nsROHS3 CompliantIDT7164
-
-Through Hole28-DIP (0.300, 7.62mm)28-PDIP0°C~70°C TATubeObsolete1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile20nsSRAMParallel20ns-IDT7164
-
15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)28-CerDip-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile20nsSRAMParallel20nsNon-RoHS Compliant-
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